Hostname: page-component-586b7cd67f-2brh9 Total loading time: 0 Render date: 2024-11-24T09:07:24.358Z Has data issue: false hasContentIssue false

Stress Determination in Textured Thin Films Using X-Ray Diffraction

Published online by Cambridge University Press:  29 November 2013

Get access

Extract

Thin film stresses are important in many areas of technology. In the semiconductor industry, metal interconnects are prone to stress voiding and hillock formation. Stresses in passivation layers can lead to excessive substrate curvature which can cause alignment difficulty in subsequent lithographic processing. In other thin film applications, stresses can cause peeling from mechanical failure at the film-substrate interface. Beyond these issues of reliability, stress and the resulting strain can be used to tune the properties of thin film materials. For instance, strain, coupled with the magnetostrictive effect, can be utilized to induce the preferred magnetization direction. Also, epitaxial strains can be used to adjust the bandgap of semiconductors. Finally, the anomalous mechanical properties of multilayered materials are thought to be partially due to the extreme strain states in the constituents of these materials. To fully optimize thin film performance, a fundamental understanding of the causes and effects of thin film stress is needed. These studies in turn rely on detailed characterization of the stress and strain state of thin films.

X-ray diffraction and the elastic response of materials provide a powerful method for determining stresses. Stresses alter the spacing of crystallographic planes in crystals by amounts easily measured by x-ray diffraction. Each set of crystal planes can act as an in-situ strain gauge, which can be probed by x-ray diffraction in the appropriate geometry. Hence it is not surprising that x-ray diffraction is one of the most widely used techniques for determining stress and strain in materials. (For reviews of this topic, see References 5–7.) This article is a tutorial on the use of x-ray diffraction to extract the stress state and the unstrained lattice parameter from thin films. We present a handbook of useful results that can be widely applied and should be mastered by anyone seriously interested in stresses in crystalline thin films with a crystallographic growth texture.

Type
Mechanical Behavior of Thin Films
Copyright
Copyright © Materials Research Society 1992

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Gardner, Donald S. and Flinn, Paul, in Thin Films: Stresses and Mechanical Properties, edited by Bravman, J.C., Mix, W.D., Barnett, D.M., and Smith, D.A. (Mater. Res. Soc. Symp. Proc. 130, Pittsburgh, PA, 1989) p. 69.Google Scholar
2.Chikazumi, S. and Charap, S.H., Physics of Magnetism (Kreiger, Malabar, Florida, 1986).Google Scholar
3.Bean, J.C., in Layered Structures, Epitaxy, and Interfaces, edited by Gibson, J.M. and Dawson, L.R. (Mater. Res. Soc. Symp. Proc. 37, Pittsburgh, PA, 1985) p. 245254.Google Scholar
4.Schuller, I.K., in Thin Films: Stresses and Mechanical Properties III, edited by Nix, W.D., Bravman, J.C., Arzt, E., and Freund, L.B. (Mater. Res. Soc. Symp. Proc. 239, Pittsburgh, PA, 1992).Google Scholar
5.Noyan, I.C. and Cohen, J.B, Residual Stress: Measurement by Diffraction and Interpretation (Springer-Verlag, New York, 1987).Google Scholar
6.James, M.R. and Cohen, J.B., “The Measurement of Residual Stresses by X-ray Diffraction Techniques,” in Treatise on Materials Science and Technology 19A, edited by Herbert, H. (Academic Press, New York, 1980) p. 162.Google Scholar
7.Segmüller, A. and Murakami, M., “X-ray Diffraction Analysis of Strains and Stresses in Thin Films,” in Treatise on Materials Science and Technology 27, edited by Herbert, H. (Academic Press, New York, 1988) p. 143200.Google Scholar
8.Schwartz, L.H. and Cohen, J.B., Diffraction rom Materials (Springer-Verlag, New York, 1987).CrossRefGoogle Scholar
9.Vineyard, G.H., Phys. Rev. B 26 (1982) p. 41464159.CrossRefGoogle Scholar
10.Dieter, George E., Mechanical Metallurgy (McGraw-Hill, New York, 1986).Google Scholar
11.Wolfram, Stephen, Mathematica, A System for Doing Mathematics by Computer (Addison-Wesley, Redwood City, California, 1991).Google Scholar
12.Cullity, D. B, Elements of X-Ray Diffraction (Addison-Wesley, Reading, Massachusetts, 1967).Google Scholar
13.Langlet, M. and Joubert, J.C., J. Appl. Phys. 64 (1988) p. 780.CrossRefGoogle Scholar
14.Valvoda, V., Kužel, R. Jr., Černý, R., and Rafaja, D., Thin Solid Films 193/194 (1990) p. 401408.CrossRefGoogle Scholar
15.Flinn, P.A. and Waychunas, G.A., J. Vac. Sci. Technol. B 6 (1988) p. 17491755.CrossRefGoogle Scholar
16.Behnken, H. and Hauk, V., Thin Solid Films 193/194 (1990) p. 333341.CrossRefGoogle Scholar
17.Perry, A.J.J. Vac. Sci. Technol. A 8 (1990) p. 1351.CrossRefGoogle Scholar
18.Vink, T.J., Somers, M.A., Daams, J.L.C., and Dirks, A.G., J. Appl. Phys. 70 (1991) p. 4301.CrossRefGoogle Scholar
19.Korhonen, M.A., Paszkiet, C.A., Black, R.D., and Li, Che-Yu, Scripta Met. Mater. 24 (1990) p. 22972302.CrossRefGoogle Scholar
20.Bain, J.A., Chyung, L.J., Brennan, S.M., and Clemens, B.M., Phys. Rev. B 44 (1991) p. 11841192.CrossRefGoogle Scholar