Crossref Citations
This article has been cited by the following publications. This list is generated based on data provided by
Crossref.
Trabzon, L
Awadelkarim, O.O
and
Werking, J
1998.
The effects of interlayer dielectric deposition and processing on the reliability of n-channel transistors.
Solid-State Electronics,
Vol. 42,
Issue. 11,
p.
2031.
Kim, Sung Mog
Yoon, Do Y.
Nguyen, Cattien V.
Han, Jie
and
Jaffe, Richard L.
1998.
Experimental and Theoretical Study of Structure-Dielectric Property Relationships for Polysilsesquioxanes.
MRS Proceedings,
Vol. 511,
Issue. ,
Xu, Yuhuan
Tsai, Yi-pin
Tu, K. N.
Zhao, Bin
Liu, Q.-Z.
Brongo, Maureen
Sheng, George T. T.
and
Tung, C. H.
1999.
Dielectric property and microstructure of a porous polymer material with ultralow dielectric constant.
Applied Physics Letters,
Vol. 75,
Issue. 6,
p.
853.
Demolliens, O.
Berruyer, P.
Morand, Y.
Tabone, C.
Roman, A.
Cochet, M.
Assous, M.
Feldis, H.
Blanc, R.
Tabouret, E.
Louis, D.
Arvet, C.
Lajoinie, E.
Gobil, Y.
Passemard, G.
Jourdan, F.
Moussavi, M.
Cordeau, M.
Morel, T.
Mourier, T.
Ulmer, L.
Sicurani, E.
Tardif, F.
Beverina, A.
Trouillet, Y.
and
Renaud, D.
1999.
Copper-SilK integration in a 0.18 μm double level metal interconnect.
p.
198.
Yu, K. C.
Defilippi, J.
Tiwari, R.
Sparks, T.
Smith, D.
Olivares, M.
Selinidis, S.
Zhang, J.
Junker, K.
Braekelmann, G.
Farkas, J.
Lee, K. S.
Filipiak, S.
Lindell, M.
Watanabe, J. K.
Wetzel, J. T.
Jawarani, D.
Herrick, M. T.
Cave, N. G.
Hobbs, C. C.
Stankus, J. J.
Mora, R.
Freeman, M.
Van Gompel, T.
Denning, D.
Fowler, B. W.
Garcia, S.
Newton, T.
Pena, D.
Keyes, C.
Nguyen, T.
Kirksey, S.
Neil, T.
Conner, J.
Lee, J. J.
Fox, R.
Hershey, R.
Crabtree, P.
Sieloff, D. D.
Blumenthal, R.
and
Weitzman, E. J.
1999.
Integration Challenges of Inorganic Low-K (K≤2.5) Materials with CU for Sub-0.25μm Multilevel Interconnects.
MRS Proceedings,
Vol. 565,
Issue. ,
Kim, S. E.
and
Steinbrüchel, Ch.
1999.
Metal/fluorinated-dielectric interactions in microelectronic interconnections: Rapid diffusion of fluorine through aluminum.
Applied Physics Letters,
Vol. 75,
Issue. 13,
p.
1902.
Yu, K. C.
Defilippi, J.
Tiwari, R.
Sparks, T.
Smith, D.
Olivares, M.
Selinidis, S.
Zhang, J.
Junker, K.
Braekelmann, G.
Farkas, J.
Lee, K. S.
Filipiak, S.
Lindell, M.
Watanabe, J. K.
Wetzel, J. T.
Jawarani, D.
Herrick, M. T.
Cave, N. G.
Hobbs, C. C.
Stankus, J. J.
Mora, R.
Freeman, M.
Van Gompel, T.
Denning, D.
Fowler, B. W.
Garcia, S.
Newton, T.
Pena, D.
Keyes, C.
Nguyen, T.
Kirksey, S.
Neil, T.
Conner, J.
Lee, J. J.
Fox, R.
Hershey, R.
Crabtree, P.
Sieloff, D. D.
Blumenthal, R.
and
Weitzman, E. J.
1999.
Integration Challenges of Inorganic Low-K (K≤2.5) Materials with Cu for Sub-0.25µm Multilevel Interconnects.
MRS Proceedings,
Vol. 564,
Issue. ,
Trabzon, L.
Awadelkarim, O. O.
and
Werking, J.
1999.
Dependence of the performance and reliability of n-metal-oxide-silicon field effect transistors on interlayer dielectric processing.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Vol. 17,
Issue. 5,
p.
2216.
Xu, Yuhuan
Tsai, Yipin
Zheng, D. W.
Tu, K. N.
Wo Ong, Chung
Choy, Chung Loong
Zhao, Bin
Liu, Q.-Z.
and
Brongo, Maureen
2000.
Measurement of mechanical properties for dense and porous polymer films having a low dielectric constant.
Journal of Applied Physics,
Vol. 88,
Issue. 10,
p.
5744.
Banerjee, K.
Mehrotra, A.
Hunter, W.
Saraswat, K.C.
Goodson, K.E.
and
Wong, S.S.
2000.
Quantitative projections of reliability and performance for low-k/Cu interconnect systems.
p.
354.
Venugopal, Vijayakumar C.
Lakhtakia, Akhlesh
Messier, Russell
and
Kucera, John-Paul
2000.
Low-permittivity nanocomposite materials using sculptured thin film technology.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Vol. 18,
Issue. 1,
p.
32.
Kondoh, E.
Asano, T.
Nakashima, A.
and
Komatu, M.
2000.
Effect of oxygen plasma exposure of porous spin-on-glass films.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena,
Vol. 18,
Issue. 3,
p.
1276.
Trabzon, L
and
Awadelkarim, O O
2000.
Damage to sub-half-micron metal-oxide-silicon field-effect transistors from plasma processing of low- k polymer interlayer dielectrics.
Semiconductor Science and Technology,
Vol. 15,
Issue. 4,
p.
309.
Xiao, Xia
Streiter, Reinhard
Ruan, Gang
Song, Renru
Otto, Thomas
and
Gessner, Thomas
2000.
Modelling and simulation for dielectric constant of aerogel.
Microelectronic Engineering,
Vol. 54,
Issue. 3-4,
p.
295.
Trabzon, L.
and
Awadelkarim, O.O.
2001.
The degradation of MOSFETs induced by the via etching of interlayer low-k polymers.
p.
103.
Lee, Hae-Jeong
Lin, Eric K.
Wang, Howard
Wu, Wen-Li
Chen, Wei
and
Deis, Thomas A.
2001.
Correlations Between Structural Characteristics and Process Conditions of HSQ Based Porous Low-k Thin Films.
MRS Proceedings,
Vol. 714,
Issue. ,
Baklanov, M.R.
Kondoh, E.
Lin, E.K.
Gidley, D.W.
Lee, H.-J.
Mogilnikov, K.P.
and
Sun, J.N.
2001.
Comparative study of porous SOG films with different non-destructive instrumentation.
p.
189.
Xiao, X.
Streiter, R.
Wolf, H.
Ruan, G.
Murray, C.
and
Gessner, T.
2001.
Simulation of the dielectric constant of aerogels and estimation of their water content.
Microelectronic Engineering,
Vol. 55,
Issue. 1-4,
p.
53.
Xu, Yuhuan
Zheng, D. W.
Tsai, Yipin
Tu, K. N.
Zhao, Bin
Liu, Q. Z.
Brongo, Maureen
Ong, Chung Wo
Choy, Chung Loong
Sheng, George T. T.
and
Tung, C. H.
2001.
Synthesis and characterization of porous polymeric low dielectric constant films.
Journal of Electronic Materials,
Vol. 30,
Issue. 4,
p.
309.
Yoo, Sehoon
Eun, Byung Soo
Kim, Young-Ho
and
Chung, Yong-Chae
2001.
The effect of low dielectric polymer thickness on the electromigration characteristics of Al(1% Cu–0.5% Si) thin films.
Thin Solid Films,
Vol. 382,
Issue. 1-2,
p.
222.