Functionalized Silsesquioxanes Show High Sensitivity and Stability for Next-Generation E-Beam Lithography Resists

Scott Cooper

doi:10.1557/mrs2010.594

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Functionalized Silsesquioxanes Show High Sensitivity and Stability for Next-Generation E-Beam Lithography Resists

Published online by Cambridge University Press: 31 January 2011

Scott Cooper

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Type: Research/Researchers
Information: MRS Bulletin , Volume 35 , Issue 7: Advances in Scattering Probes for Materials , July 2010 , pp. 488

DOI: https://doi.org/10.1557/mrs2010.594 [Opens in a new window]
Copyright: Copyright © Materials Research Society 2010

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Functionalized Silsesquioxanes Show High Sensitivity and Stability for Next-Generation E-Beam Lithography Resists

Volume 35, Issue 7
Scott Cooper
DOI: https://doi.org/10.1557/mrs2010.594

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Functionalized Silsesquioxanes Show High Sensitivity and Stability for Next-Generation E-Beam Lithography Resists

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