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Light Emission From Er-Doped Si: Materials Properties, Mechanisms, and Device Performance

Published online by Cambridge University Press:  29 November 2013

Salvatore Coffa ,
Giorgia Franzo  and
Francesco Priolo
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Extract

The achievement of efficient room-temperature light emission from crystalline Si is a crucial step toward the achievement of fully Si-based optoelec-tronics. However Si, the leading semiconductor in microelectronic applications, is unable to perform as well in the optical arena. In fact due to its indirect bandgap, Si does not exhibit efficient light emission and has been considered unsuitable for optoelectronic applications. Several efforts have been dedicated to overcoming this limitation. Among them, luminescence through the incorporation of rare-earth impurities has been considered In particular, erbium doping has been demonstrated as a valid approach toward achievement of efficient light emission from Si.1−43 Erbium is a rare-earth ion that, in its 3+ state, can emit photons at 1.54 μm because of an intra-4f shell transition between the first excited state (4I13/2) and the ground state (4I15/2). This emission is particularly attractive because its wavelength falls inside a window of maximum transmission for the silica optical fibers. When Er ions are inserted within a Si matrix, the excitation (4I15/2 → 4I13/2) can be achieved through the carriers provided by the host, whereas the subsequent deexcitation (4I13/2 → 4I15/2) can result in a sharp, atomlike light emission.

Type
Silicon-Based Optoelectronics
Information
MRS Bulletin , Volume 23 , Issue 4 , April 1998 , pp. 25 - 32
Copyright
Copyright © Materials Research Society 1998

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References

1.Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., and Langer, D.W. (Mater. Res. Soc. Symp. Proc. 301, Pittsburgh, 1993).Google Scholar
2.Rare Earth Doped Semiconductors II, edited by Coffa, S., Polman, A., and Schwartz, R.N. (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, 1996).Google Scholar
3.Ennen, H., Schneider, J., Pomrenke, G., and Axmann, A., Appl. Phys. Lett. 43 (1983) p. 943.CrossRefGoogle Scholar
4.Ennen, H., Pomrenke, G., Axmann, A., Eisele, K., Haydl, W., and Schneider, J., Appl. Phys. Lett. 46 (1985) p. 381.CrossRefGoogle Scholar
5.Ren, F.Y.G., Michel, J., Sun-Paduano, Q., Zheng, B., Kitagawa, H., Jacobson, D.C., Poate, J.M., and Kimerling, L.C., in Rare Earth Doped Semiconductors, edited by Pomrenke, G.S., Klein, P.B., and Langer, D.W. (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, 1996) p. 87.Google Scholar
6.Eaglesham, D.J., Michel, J., Fitzgerald, E.A., Jacobson, D.C., Poate, J.M., Benton, J.L., Polman, A., Xie, Y-H., and Kimerling, L.C., Appl. Phys. Lett. 58 (1991) p. 2797.CrossRefGoogle Scholar
7.Michel, J., Benton, J.L., Ferrante, R.F., Jacobson, D.C., Eaglesham, D.J., Fitzgerald, E.A., Xie, Y-H., Poate, J.M., and Kimerling, L.C., J. Appl. Phys. 70 (1991) p. 2667.CrossRefGoogle Scholar
8.Benton, J.L., Michel, J., Kimerling, L.C., Jacobson, D.C., Xie, Y-H., Eaglesham, D.J., Fitzgerald, E.A., and Poate, J.M., Appl. Phys. Lett. p. 2667.Google Scholar
9.Adler, D.L., Jacobson, D.C., Eaglesham, D.J., Marcus, M.A., Benton, J.L., Poate, J.M., and Citrin, P.H., Appl. Phys. Lett. 61 (1992) p. 2181.CrossRefGoogle Scholar
10.Favennec, P.N., l'Haridon, H., Moutonnet, D., Salvi, M., and Gauneau, M., J. Jpn. J. Appl. Phys. 29 (1990) p. L524.CrossRefGoogle Scholar
11.Xie, Y-H., Fitzgerald, E.A., and Mii, Y.J., J. Appl. Phys. 70 (1991) p. 3233.Google Scholar
12.Polman, A., Custer, J.S., Snoeks, E., and van den Hoven, G.N., Appl. Phys. Lett. 62 (1993) p. 507.CrossRefGoogle Scholar
13.Custer, J.S., Polman, A., and van Pinxteren, M.H., J. Appl. Phys. 75 (1994) p. 2809.CrossRefGoogle Scholar
14.Coffa, S., Priolo, F., Franzo, G., Bellani, V., Camera, A., and Spinella, C., Phys. Rev. B 48 (1993) p. 11782.CrossRefGoogle Scholar
15.Matsuoka, M. and Tohno, Shun-ichi, J. Appl. Phys. 78 (1995) p. 2751.CrossRefGoogle Scholar
16.Morse, M., Zheng, B., Palm, J., Duan, X., and Kimerling, L.C., in Rare Earth Doped Semiconductors II, edited by Coffa, S., Polman, A., and Schwartz, R.N. (Mater. Res. Soc. Symp. Proc. 422, Pittsburgh, 1996) p. 41.Google Scholar
17.Ni, W-X., Joelsson, K.B., Du, C-X., Buyanova, I.A., Pozina, G., Chen, W.M., Hansson, G.V., Monemar, B., Cardenas, J., and Svensson, B.G., Appl. Phys. Lett. 70 (1997) p. 3383.CrossRefGoogle Scholar
18.Priolo, F., Coffa, S., Franzo, G., Spinella, C., Camera, A., and Bellani, V., J. Appl. Phys. 74 (1993) p. 4936.CrossRefGoogle Scholar
19.Coffa, S., Franzo, F., Priolo, F., Polman, A., and Serna, R., Phys. Rev. B 49 (1994) p. 16313.CrossRefGoogle Scholar
20.Michel, J., Ren, F.Y.G., Zheng, B., Jacobson, D.C., Poate, J.M., and Kimerling, L.C., Mater. Sci. Forum 143–147 (1994) p. 707.Google Scholar
21.Needles, M., Schlüter, M., and Lannoo, M., Phys. Rev. B 47 (1993) p. 15533.CrossRefGoogle Scholar
22.Yassievich, I.N. and Kimerling, L.C., Semicond. Sci. Technol. 8 (1993) p. 718.CrossRefGoogle Scholar
23.Libertino, S., Coffa, S., Franzo, G., and Priolo, F., J. Appl. Phys. 78 (1995) p. 3867.CrossRefGoogle Scholar
24.Priolo, F., Franzo, G., Coffa, S., Polman, A., Libertino, S., Barklie, R., and Carey, D., J. Appl. Phys. p. 3874.Google Scholar
25.Palmetshofer, L., Suprun-Belevich, Yu., and Stepikhova, M., Nuclear Instrum. Methods Phys. Res. B 127/128 (1997) p. 479.CrossRefGoogle Scholar
26.Przybylinska, H., Hendorfer, G., Bruckner, M., Palmetshofer, L., and Jantsch, W., Appl. Phys. Lett. 66 (1995) p. 490.CrossRefGoogle Scholar
27.Przybylinska, H., Jantsch, W., Suprun-Belevitch, Y., Stepikhova, M., Palmetshofer, L., Hendorfer, G., Kozanecki, A., Wilson, R.J., and Sealy, B.J., Phys. Rev. B 54 (1996) p. 2532.CrossRefGoogle Scholar
28.Carey, J.D., Donegan, J.F., Barklie, R.C., Priolo, F., Franzo, G., and Coffa, S., Appl. Phys. Lett. 69 (1996) p. 3854.CrossRefGoogle Scholar
29.Terrasi, A., Franzò, G., Coffa, S, Priolo, F., D'Acapito, D., and Mobilio, S., Appl Phys. Lett. 70 (1997). p. 1712.CrossRefGoogle Scholar
30.Wahl, U., Vantomme, A., Wächter, J. De, Moons, R., Langouche, G., Marques, J.G., Correla, J.G., and the ISOLDE Collaboration, Phys. Rev. Lett. 79 (1997) p. 2069.CrossRefGoogle Scholar
31.Kik, P.G., de Dood, M.J.A., Kikoin, K., and Polman, A., Appl. Phys. Lett. 70 (1997) p. 1721.CrossRefGoogle Scholar
32.Franzò, G., Priolo, F., Coffa, S., Polman, A., and Camera, A., Appl. Phys. Lett. 64 (1994) p. 2235.CrossRefGoogle Scholar
33.Zheng, B., Michel, J., Ren, F.Y.G., Kimerling, L.C., Jacobson, D.C., and Poate, J.M., Appl. Phys. Lett. p. 2842.Google Scholar
34.Coffa, S., Franzò, G., and Priolo, F., Appl. Phys. Lett. 69 (1996) p. 2077.CrossRefGoogle Scholar
35.Stimmer, J., Reittinger, A., Nützel, J.F., Abstreiter, G., Holzbrecher, H., and Buchal, C.h., Appl. Phys. Lett. 68 p. 3290.CrossRefGoogle Scholar
36.Franzò, G., Coffa, S., Priolo, F., and Spinella, C., J. Appl. Phys. 81 (1997) p. 2784.CrossRefGoogle Scholar
37.Du, C-X., Ni, W-X., Joelsson, K.B., and Hansson, G.V., Appl. Phys. Lett. 71 (1997) p. 1023.CrossRefGoogle Scholar
38.Matsuoka, M. and Tohno, S., Appl. Phys. Lett. 71 (1997) p. 96.CrossRefGoogle Scholar
39.Sobolev, N.A., Emel'yanov, A.M., and Shtel'makh, K.F., Appl. Phys. Lett. p. 1930.Google Scholar
40.Palm, J., Gan, F., Zheng, B., Mitchel, J., and Kimerling, L.C., Phys. Rev. B 54 (1996) p. 17603.CrossRefGoogle Scholar
41.Priolo, F., Franzò, G., Coffa, S., and Camera, A., Phys. Rev. 57 (1998).CrossRefGoogle Scholar
42.Coffa, S., Franzò, G., Priolo, F., Pacelli, A., and Lacaita, A., Appl. Phys. Lett. in press.Google Scholar
43.Polman, A., J. Appl. Phys. 82 (1997) p. 1.CrossRefGoogle Scholar
44.Lombardo, S., Campisano, S.U., van den Hoven, G.N., and Polman, A., Appl. Phys. Lett. 77 (1995) p. 6504.Google Scholar
45.van den Hoven, G.N., Shin, J.H., Polman, A., Lombardo, S., and Campisano, S.U., Appl. Phys. Lett. 78 p. 2642.Google Scholar
46.Bresler, M.S., Gusev, O.B., Kudoyarova, V.Kh., Kuznetsov, A.N., Pak, P.E., Terukov, E.I., Yassievich, I.N., Zakharchenya, B.P., Fuhs, W., and Sturm, A., Appl. Phys. Lett. 67 (1995) p. 3599.CrossRefGoogle Scholar
47.Shin, J.H., Serna, R., van den Hoven, G.N., Polman, A., van Sark, W.G.J.H.M., and Vredenberg, A.M., Appl. Phys. Lett. 68 (1996) p. 46.CrossRefGoogle Scholar
48.Gusev, O.B., Kuznetsov, A.N., Terukov, E.I., Bresler, M.S., Kudoyarova, V.K.h., Yassievich, I.N., Zakharchenya, B.P., and Fuhs, W., Appl. Phys. Lett. 70 (1997) p. 240.CrossRefGoogle Scholar