Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-28T02:24:02.309Z Has data issue: false hasContentIssue false
  • English
  • Français

Magnetic nanocluster formation of Fe ions embedded in SiO2 and Al2O3 substrates

Published online by Cambridge University Press:  03 May 2018

K. Bharuth-Ram ,
C. Ronning  and
T. B. Doyle
K. Bharuth-Ram*
Affiliation:
Physics Department, Durban University of Technology, Durban 4000, South Africa School of Chemistry and Physics, University of KwaZulu-Natal, Durban 4000, South Africa
C. Ronning
Affiliation:
Physics Department, Durban University of Technology, Durban 4000, South Africa Institute for Solid State Physics, Friedrich-Schiller-University, Jena, Germany
T. B. Doyle
Affiliation:
Materials Research Division, iThemba LABS, Somerset West, South Africa
*
*(Email: [email protected])
Get access

Abstract

Research focus in recent years on magnetic behaviour of transition metal (TM) ions embedded in semiconductors has shifted from intrinsic effects to extrinsic effects such as the formation of nanoclusters of the TM ions and the influence of the host matrix on their magnetic behaviour. Our studies, using conversion electron Mössbauer Spectroscopy and magnetization measurements, on SiO2 and Al2O3 substrates implanted with 4 at. % Fe, show ferromagnetic behaviour of α-Fe clusters in amorphous SiO2, but α-Fe2O3 clusters displaying superparamagnetic relaxation in crystalline Al2O3.

Keywords

ion-implantationnanostructuremagnetic properties
Type
Articles
Information
MRS Advances , Volume 3 , Issue 42-43: African Materials Research Society 2017 , 2018 , pp. 2603 - 2608
Copyright
Copyright © Materials Research Society 2018 

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

References:

Dietl, T., Ohno, H., Matsukura, F., Cibert, F. and Ferrant, D.: Science 287, 1019 (2000)CrossRefGoogle Scholar
Sato, K. and Katayama-Yoshida, H.: Japan J, Appl. Phys. 40, L334 (2001)CrossRefGoogle Scholar
Pearton, S. J., Heo, W. H., Ivill, M., Norton, D. P. and Steiner, T.: Semicond. Sci & Tech. 19, R59–R74, (2005)CrossRefGoogle Scholar
Coey, J. M. D.: Solid State Sci. 7, 660–667 (2005)CrossRefGoogle Scholar
Janisch, R., Gopal, P. and Spaldin, N. A.: J. Phys. Condens. Matter 17, R657 –R689 (2007)CrossRefGoogle Scholar
Ziegler, J. F., Ziegler, M. and Biersack, J.: Nucl. Instr. Meth. Phys. Res. B 268, 1818–1823 (2010)CrossRefGoogle Scholar
Goorsky, M. (Ed.): ION IMPLANTATION, In Tech (Publ.) Rijeka, Croatia (2012)Google Scholar
Lagarec, K. and Rancourt, D. G.: Nucl.Instrum. Meth. Phys. Res. B 129, 266–280 (1997)CrossRefGoogle Scholar
Perez, A., Treilleux, M., Capra, T. and Griscom, D. L.: J. Mater. Res. 2 (1987) 910.CrossRefGoogle Scholar
Zhang, G. L., Liu, W. H., Xu, F. and Hu, W. X.: Appl. Phys. Lett. 61 (1992) 2527.CrossRefGoogle Scholar
Sakamoto, I., Honda, S., Tanoue, H., Hayashi, N. and Yamane, H.: Nucl. Instrum. Meth. B 148, 1039–1043 (1999)CrossRefGoogle Scholar
McHargue, C. J., Ren, S. X. and Hunn, J. D.: Mater. Sci & Eng. A 253, 1–7 (1998)CrossRefGoogle Scholar