Radiation Effects in Materials
Research Article
Structure Change under 1 MeV Electron Beam Irradiation of Amorphous-contained Nano-sized W-dendrites Fabricated on Alumina Substrates with Electron-beam-induced Deposition
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- 01 August 2005, pp. 2050-2051
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Effect of Electron Flux on the Electronic-excitation-induced Phase Separation in GaSb Nanoparticles
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- 01 August 2005, pp. 2052-2053
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Environmental Scanning Electron Microscopic Study Of Electron Impacted High Explosive Materials
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- 01 August 2005, pp. 2054-2055
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Structure Modification of PbxCa10-x(VO4)6F2 Apatite under Electron Beam Irradiation
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- 01 August 2005, pp. 2056-2057
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Detection of the Spontaneous Change in the Burgers Vector of Perfect Dislocation Loops in Iron
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- 01 August 2005, pp. 2058-2059
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In–Situ TEM of Ion Irradiated Fe–Pt Alloy Nanostructures
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- 01 August 2005, pp. 2060-2061
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Radiation Damage by Ar+ Ion-Milling in Ferroelectric Oxides.
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- 01 August 2005, pp. 2062-2063
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In situ TEM Study of Electron Beam Stimulated Organization of Three-dimensional Void Superlattice in CaF2
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- 01 August 2005, pp. 2064-2065
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Cavity Formation Study in SiC/SiC Composite Irradiated with Multiple-ion Beam at Elevated Temperatures
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- 01 August 2005, pp. 2066-2067
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Semiconductors
Research Article
Zero-loss Filtered TEM Imaging of Microelectronic Structures Using In Column Filter Technology
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- 01 August 2005, pp. 2068-2069
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TEM Study of Oxygen Precipitation in Si Wafers with Backside Layers
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- 01 August 2005, pp. 2070-2071
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HRTEM Study of InN Films Grown on Sapphire - Evidence for a Cubic InN Structure
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- 01 August 2005, pp. 2072-2073
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Phase Shift of Reverse Biased p-n Junction Arrays by Fourier Methods
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- 01 August 2005, pp. 2074-2075
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Strain Relaxation of GaNyAs1-y Films on (100) GaAs Substrates Studied by Transmission Electron Microscopy
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- 01 August 2005, pp. 2076-2077
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TEM Characterization of Ag Precipitates in Screen Printed Ag Contacts for Si Solar Cells
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- 01 August 2005, pp. 2078-2079
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Scanning Electron Microscopy Cathodoluminescence Studies of Piezoelectric Fields in an InGaN Multiple Quantum Well Light-Emitting Diode
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- 01 August 2005, pp. 2080-2081
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Physical Properties of Hafnium-Silicate Transistor Gate Dielectric Stacks after Thermal Processing
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- 01 August 2005, pp. 2082-2083
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Characterization of Nanoscale Lattice Strains in Si CMOS by Convergent Beam Electron Diffraction (CBED)
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- 01 August 2005, pp. 2084-2085
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Characterization of Epitaxial Layer Defects in Silicon Wafers Using Focused Ion Beam and Transmission Electron Microscopy
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- 01 August 2005, pp. 2086-2087
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Re-crystallisation of Amorphous Silicon in the Production of Low Defect Density Silicon on Sapphire Thin Films
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- 01 August 2005, pp. 2088-2089
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