Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-24T11:00:24.007Z Has data issue: false hasContentIssue false
  • English
  • Français

Xe plasma FIB Delayering of IC based on 14 nm node technology

Published online by Cambridge University Press:  25 July 2016

Jozef Vincenc Oboňa ,
Tomáš Hrnčíř ,
Sharang ,
Marek Šikula  and
Andrey Denisyuk
Jozef Vincenc Oboňa
Affiliation:
TESCAN Brno, s.r.o., Libusina trida 1, Brno, Czech Republic
Tomáš Hrnčíř
Affiliation:
TESCAN Brno, s.r.o., Libusina trida 1, Brno, Czech Republic
Sharang
Affiliation:
TESCAN Brno, s.r.o., Libusina trida 1, Brno, Czech Republic
Marek Šikula
Affiliation:
TESCAN Brno, s.r.o., Libusina trida 1, Brno, Czech Republic
Andrey Denisyuk
Affiliation:
TESCAN ORSAY HOLDING, Libušina tfida 21, Brno, Czech Republic

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 56 - 57
Copyright
© Microscopy Society of America 2016 

References

[1] http://www.itrs2.net/.Google Scholar
[2] http://www.intel.com/content/www/us/en/silicon-innovations/intel-14nm-technology.html.Google Scholar
[3] Hrnčíř, T, et al, 38th ISTFA Conf. Proc (2012). p. 26.Google Scholar
[4] Delobbe, A, et al, Microsc. and Microanal 20 (2014) 298.Google Scholar
[5] Hrnčíř, T, et al, 41th ISTFA Conf. Proc (2015). p. 60.Google Scholar