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Utilization of FIB Technique in TEM Specimen Preparation of GaN-based Devices for Dislocation Investigation

Published online by Cambridge University Press:  23 September 2015

Jian-Guo Zheng ,
Zhenguang Shao  and
Dunjun Chen
Jian-Guo Zheng
Affiliation:
Irvine Materials Research Institute, University of California, Irvine, CA 92697-2800, USA
Zhenguang Shao
Affiliation:
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P.R. China
Dunjun Chen
Affiliation:
Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, and School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, P.R. China

Abstract

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Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1991 - 1992
Copyright
Copyright © Microscopy Society of America 2015 

References

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[4] Han, D. P., et al, Jpn. J. Appl. Phys. 54 (2015) 02BA01.CrossRefGoogle Scholar
[5] TEM work was performed at the Irvine Materials Research Institute (IMRI) at UC Irvine, using FEI Quanta 3D dual-beam system for TEM specimen preparation which was funded in part by the National Science Foundation Center for Chemistry at the Space-Time Limit under grant no. CHE.Google Scholar