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Topological Impurity Segregation at Faceted Silicon Grain Boundaries Studied by Correlative Atomic-Resolution STEM and APT

Published online by Cambridge University Press:  21 December 2016

CH Liebscher ,
A Stoffers ,
O Cojocaru-Mirédin ,
B Gault ,
C Scheu ,
G Dehm  and
D Raabe
CH Liebscher
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
A Stoffers
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany. RWTH Aachen, Institute of Physics (IA), 52056 Aachen, Germany.
O Cojocaru-Mirédin
Affiliation:
RWTH Aachen, Institute of Physics (IA), 52056 Aachen, Germany.
B Gault
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
C Scheu
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
G Dehm
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.
D Raabe
Affiliation:
Max-Planck-Institut für Eisenforschung GmbH, 40237 Düsseldorf, Germany.

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S5: Conference on In Situ and Correlative Electron Microscopy (CISCEM 2016) , November 2016 , pp. 46 - 47
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Robertsausten, WC Proceedings of the Royal Society of London 43 (1887). p. 425.Google Scholar
[2] Frolov, T, et al, Nature Communications 4 (2013). p. 1899.Google Scholar
[3] Sutton, AP & Balluffi, RW Acta Metallurgica 35 (1987). p. 2177.Google Scholar
[4] Stoffers, A, et al, Prog. Photovolt: Res. Appl 23 (2015). p. 1742.Google Scholar