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Three-Dimensional Analysis of Carbon Nanotube Networks in Interconnects by Electron Tomography without Missing Wedge Artifacts

Published online by Cambridge University Press:  26 February 2010

Xiaoxing Ke*
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Sara Bals
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
Daire Cott
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Thomas Hantschel
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Hugo Bender
Affiliation:
IMEC, Kapeldreef 75, B-3001 Leuven, Belgium
Gustaaf Van Tendeloo
Affiliation:
EMAT, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
*
Corresponding author. E-mail: [email protected]
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Abstract

The three-dimensional (3D) distribution of carbon nanotubes (CNTs) grown inside semiconductor contact holes is studied by electron tomography. The use of a specialized tomography holder results in an angular tilt range of ±90°, which means that the so-called “missing wedge” is absent. The transmission electron microscopy (TEM) sample for this purpose consists of a micropillar that is prepared by a dedicated procedure using the focused ion beam (FIB) but keeping the CNTs intact. The 3D results are combined with energy dispersive X-ray spectroscopy (EDS) to study the relation between the CNTs and the catalyst particles used during their growth. The reconstruction, based on the full range of tilt angles, is compared with a reconstruction where a missing wedge is present. This clearly illustates that the missing wedge will lead to an unreliable interpretation and will limit quantitative studies.

Type
Materials Applications
Copyright
Copyright © Microscopy Society of America 2010

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