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TEM Examination on the Microstructure Rearrangement of ECRPVECD Nc-Si Thin Films Caused By Low Temperature Annealing

Published online by Cambridge University Press:  02 July 2020

S.C. Cheng ,
A.K. Kalkan ,
S.H. Bae  and
S.J. Fonash
S.C. Cheng
Affiliation:
Materials Characterization Laboratory, Pennsylvania State University
A.K. Kalkan
Affiliation:
Electronic Materials and Processing Research Laboratory, Pennsylvania State University, University Park, PA16802, USA
S.H. Bae
Affiliation:
Electronic Materials and Processing Research Laboratory, Pennsylvania State University, University Park, PA16802, USA
S.J. Fonash
Affiliation:
Electronic Materials and Processing Research Laboratory, Pennsylvania State University, University Park, PA16802, USA
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Extract

In an earlier report we have shown that the infrared photoluminescence (PL) from nanocrystalline Si films shifts to lower energies with increasing deposition temperature (in the range of 180-340 °C) and with thermal annealing. These films were deposited on Corning 1737 glass substrates using a Plasma-Therm SLR 770 ECR-PECVD system to a thickness of 4500 Å. The redshift of PL correlates well with the narrowing of (111) XRD peak, the redshift of the optical absoiption profile, the increasing conductivity and the decreasing activation energy for conductivity. Therefore, the energy shift of the PL has been considered as the result of variations in bandgap due to variations in crystallite size; i.e., variations in the quantum confinement. For the samples investigated, the PL band peak was found within the extrema of 0.99 to 0.81 eV (at 77 K). These extreme values correspond to the film deposited at 180 °C (0.99 eV PL) and the same film annealed at 600 °C for 72 hours (0.81 eV PL).

Type
Thin Films/Coatings
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 844 - 845
Copyright
Copyright © Microscopy Society of America

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References

1.Kalkan, A.K.et al., MRS proceeding, to be published, 1999.Google Scholar
2.Duncan, W.M.et al., Appl. Phys. Lett. 51(1987)773.CrossRefGoogle Scholar