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A Sub-Ev Resolution Soft-X-Ray Spectrometer for a Transmision Electron Microscope to Obtain the Density of States of the Valence Band

Published online by Cambridge University Press:  02 July 2020

M. Terauchi
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, 2-1-1 katahira, Aoba-ku, Sendai, 980-8577, Japan
H. Yamamoto
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, 2-1-1 katahira, Aoba-ku, Sendai, 980-8577, Japan
M. Tanaka
Affiliation:
Research Institute for Scientific Measurements, Tohoku University, 2-1-1 katahira, Aoba-ku, Sendai, 980-8577, Japan
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Abstract

We developed a high energy-resolution electron energy-loss spectroscopy (EELS) microscope to investigate electronic structures from specified small specimen areas [1]. EELS gives us information of the dielectric properties and the partial density of states (DOS) of the conduction band. Together with the DOS of the conduction band (unoccupied states), the DOS of the valence band (occupied states) is imperative to understand the whole electronic structure. Unfortunately, the DOS of the valence band cannot be reached directly by EELS.

A partial DOS of the valence band can be obtained by fluorescent X-ray emission spectroscopy (XES). A conventional EELS instrument attached to a TEM usually takes spectra with an energy resolution of about 1 eV, by which the DOS of conduction bands has been studied using ELNES until now. Thus, an energy resolution of about 1 eV is at least necessary for the study of the DOS of the valence band.

Type
Quantitative Stem: Imaging and Eels Analysis Honoring the Contributions of John Silcox (Organized by P. Batson, C. Chen and D. Muller)
Copyright
Copyright © Microscopy Society of America 2001

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References

[1] Terauchi, M., Tanaka, M., Tsuno, K. and Ishida, M. : J. Microscopy 194 (1999) 203.CrossRefGoogle Scholar

[2] M.Terauchi, , Yamam, H.,oto and Tanaka, M. : J. Electron Microscopy 50 (2001) in press.CrossRefGoogle Scholar

[3] Kite, T., Harada, T., Nakano, N. and Kuroda, H. : Appl. Optics 22 (1983) 512.CrossRefGoogle Scholar

[4] Tegeler, E., Kosuch, N., Wiech, G. and Faessler, A. : Phys. Stat. Sol. B 91 (1979) 223.CrossRefGoogle Scholar