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Sub-Ångstrom Transmission Electron Microscopy at 300keV

Published online by Cambridge University Press:  02 July 2020

M.A. O’Keefe
Affiliation:
National Center for Electron Microscopy, LBNL B72, Berkeley, CA, 94720, USA
E.C. Nelson
Affiliation:
National Center for Electron Microscopy, LBNL B72, Berkeley, CA, 94720, USA
J.H. Turner
Affiliation:
National Center for Electron Microscopy, LBNL B72, Berkeley, CA, 94720, USA
A. Thust
Affiliation:
Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425, Jülich, Germany
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Abstract

Sub-Ångstrom TEM to a resolution of 0.78Å has been demonstrated by the one-Ångstrom microscope (OÅM) project at the National Center for Electron Microscopy. The OÅM combines a modified CM300FEG-UT with computer software able to generate sub-Angstrom images from experimental image series.

Sub-Ångstrom HREM is gaining in importance as researchers design and build artificially-structured nanomaterials such as semiconductor devices, ceramic coatings, and nanomachines. Commonly, such nanostructures include atoms with bond lengths shorter in projection than the point resolution of a mid-voltage HREM. in addition, image simulations have shown that structure determinations of defects such as dislocation cores require sub-Angstrom resolution, as will hold true for grain boundaries and other interfaces.

Sub-Ångstrom microscopy with a transmission electron microscope requires meticulous attention to detail. As resolution is improved, resolution-limiting parameters need to be reduced. in particular, aberrations must be minimized, power supplies must be stabilized, and the microscope environment optimized to reduce acoustic and electromagnetic noise in addition to vibration.

Type
TEM Instrument Development (Organized by D. Smith and L. Allard)
Copyright
Copyright © Microscopy Society of America 2001

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References

1. Coene, W.M.J., Thust, A., Op de Beeck, M. and Van Dyck, D., Ultramicroscopy 64 (1996) 109135.CrossRefGoogle Scholar

2. Thust, W.M.J.Coene, M. Op de Beeck and Van Dyck, D., Ultramicroscopy 64 (1996) 211230.CrossRefGoogle Scholar

3. Wang, Y.C.et al., 57th Ann. Proc. MSA, Portland, Oregon (1999) 822823.Google Scholar

4. Kisielowski, C.et al., in 58th Ann. Proc. MSA, Philadelphia, Pennsylvania (2000) 1617.Google Scholar

5. O'Keefe, Michael A., in 58th Ann. Proc. MSA, Philadelphia, Pennsylvania (2000) 10361037.Google Scholar

6. O'Keefe, Michael A., in 55th Ann. Proc. MSA, Cleveland, Ohio (1997) 11651166.Google Scholar

7. Turner, John H., O'Keefe, Michael A. & Robert, Mueller, 55th Ann. Proc. MSA, Cleveland, Ohio (1997) 11771178.Google Scholar

8. O'Keefe, Michael A., in 58th Ann. Proc. MSA, Philadelphia, Pennsylvania (2000) 11921193.Google Scholar

9. O'Keefe, Michael A.et al., Ultramicroscopy (2001) submitted.Google Scholar

10. O'Keefe, Michael A., these proceedings.Google Scholar

11. Sumio, Iijima and O'Keefe, Michael A., J. Micros. 117 (1979) 347354.Google Scholar

12. Work supported by the Director, Office of Science -- through the Office of Basic Energy Sciences, Material Sciences Division, of the U.S. Department of Energy, under contract No. DE-AC03-76SF00098.Google Scholar