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A Study of Gallium FIB induced Silicon Amorphization using TEM, APT and BCA Simulation

Published online by Cambridge University Press:  23 September 2015

Jin Huang
Affiliation:
.Dresden Center for Nanoanalysis, Technische Universitaet Dresden, Dresden, Germany.
Markus Loeffler
Affiliation:
.Dresden Center for Nanoanalysis, Technische Universitaet Dresden, Dresden, Germany.
Uwe Muehle
Affiliation:
.Fraunhofer Institute for Ceramic Technologies and Systems, Dresden, Germany.
Wolfhard Moeller
Affiliation:
.Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Germany.
Hans Mulders
Affiliation:
.FEI Company, Eindhoven, the Netherlands.
Laurens Kwakman
Affiliation:
.FEI Company, Eindhoven, the Netherlands.
Ehrenfried Zschech
Affiliation:
.Dresden Center for Nanoanalysis, Technische Universitaet Dresden, Dresden, Germany. .Fraunhofer Institute for Ceramic Technologies and Systems, Dresden, Germany.

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Engelmann, HJ, et al, Microscopy Today 11 (2003) 2224.CrossRefGoogle Scholar
[2] Giannuzzi, LA, Geurts, R & Ringnalda, J, Microsc Microanal 11 (2005) 828829.Google Scholar
[3] Moeller, W, Eckstein, W & Biersack, JP, Computer Physics Communications 51 (1988) 355368.CrossRefGoogle Scholar
[4] Biersack, JP & Haggmark, LG, Nuclear Instruments and Methods 174 (1980) 257269.CrossRefGoogle Scholar
[5] Gracia, L J, et at, Journal of Applied Physics 109 (2011) 123507.CrossRefGoogle Scholar
[6] Bukonte, L, et al, Nuclear Instruments and Methods in Physics Research B 297 (2013) 2328.CrossRefGoogle Scholar
[7] The authors acknowledge the project funding from FEI and Makizu project funding from BMBF.Google Scholar