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Structure and electrical property changes of ZnO:Al films, prepared by radio frequency magnetron sputtering, by thermal annealing

Published online by Cambridge University Press:  23 September 2015

Yi-Yan Chen ,
Po-Yu Chen ,
Shao-Liang Cheng ,
Bo-Ming Huang ,
Jer-Ren Yang ,
Masahiro Kawasaki  and
Makoto Shiojiri
Yi-Yan Chen
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC.
Po-Yu Chen
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC.
Shao-Liang Cheng
Affiliation:
Department of Chemical and Materials Science Engineering, National Central University, Taoyuan, Taiwan, ROC.
Bo-Ming Huang
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC.
Jer-Ren Yang
Affiliation:
Department of Materials Science and Engineering, National Taiwan University, Taipei, Taiwan, ROC.
Masahiro Kawasaki
Affiliation:
JEOL USA Inc., 11 Dearborn Road, Peabody, MA 01960, USA.
Makoto Shiojiri*
Affiliation:
Kyoto Institute of Technology, Kyoto 606-8585, Japan.
*
* Present address: 1-297 Wakiyama, Kyoto 618-0091, Japan.

Abstract

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Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 1797 - 1798
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Yoon et al, M.H., J. Mat. Sci. Lett. 21, 1073 (2002).Google Scholar