No CrossRef data available.
Article contents
Strain-Engineering of Aluminum Scandium Nitride Films Grown Directly on Silicon by Utilizing a Gradient Seed Layer: Application of 4D-STEM Technique
Published online by Cambridge University Press: 22 July 2022
Abstract
An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
- Type
- Developments of 4D-STEM Imaging - Enabling New Materials Applications
- Information
- Copyright
- Copyright © Microscopy Society of America 2022
References
Ophus, C. Microscopy and Microanalysis 25 (2019), p. 563. https://doi.org/10.1017/S1431927619000497.CrossRefGoogle Scholar
The authors acknowledge funding from the NSF CAREER Award (1944248) and in part The Defense Advanced Research Projects Agency (DARPA) Small Business Innovation Research (SBIR) under award HR0011-21-9-0004. This work was carried out in part at the Singh Center for Nanotechnology at the University of Pennsylvania, a member of the National Nanotechnology Coordinated Infrastructure (NNCI) network, which is supported by the National Science Foundation (Grant No. HR0011-21-9-0004).Google Scholar
You have
Access