Hostname: page-component-586b7cd67f-r5fsc Total loading time: 0 Render date: 2024-11-29T15:42:06.033Z Has data issue: false hasContentIssue false

Strain Relaxation in InAs Quantum Dots and its Suppression by Indium Flushing

Published online by Cambridge University Press:  23 September 2015

H. Xie
Affiliation:
School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, USA Department of Physics, Arizona State University, Tempe, USA
F. A. Ponce
Affiliation:
Department of Physics, Arizona State University, Tempe, USA
R. Jakomin
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Campus de Xerem, UFRJ, Duque de Caxias, Brazil
M. P. Pires
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Instituto de Fisica, UFRJ, Rio de Janeiro, Brazil
R. Prioli
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Pontificia Universidade Catolica do Rio de Janeiro, Rio de Janeiro, Brazil
P. L. Souza
Affiliation:
Instituto Nacional de Ciencia e Tecnologia de Nanodispositivos Semicondutores, PUC-Rio, Brazil Pontificia Universidade Catolica do Rio de Janeiro, Rio de Janeiro, Brazil

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Luque, A. & Marti, A., Phys. Rev. Lett. 78, (1997). p. 5014.Google Scholar
[2] Jakomin, R., et al, J. Appl. Phys. 116 (2014). p. 093511.Google Scholar
[3] Leonard, D., et al, Phys. Rev. B 50 (1994). p. 11687.Google Scholar
[4] Wasilewski, Z., et al, Cryst. Growth 202 (1999). p. 1131.Google Scholar
[5] We gratefully acknowledge the use of facilities within the LeRoy Eyring Center for Solid State Science at Arizona State University..Google Scholar