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Strain at Coalescence of Patterned (Al)GaN Nanorod Arrays Formed by Selective Area Growth for Optoelectronic Devices

Published online by Cambridge University Press:  25 July 2016

A. Pofelski ,
S.Y. Woo ,
B.H. Le ,
X. Liu ,
S. Zhao ,
Z. Mi  and
G.A. Botton
A. Pofelski
Affiliation:
Department of Materials Sci. and Eng., McMaster University, Hamilton, Ontario L8S 4M1, Canada
S.Y. Woo
Affiliation:
Department of Materials Sci. and Eng., McMaster University, Hamilton, Ontario L8S 4M1, Canada
B.H. Le
Affiliation:
Department of Electrical and Comp. Eng., McGill University, Montreal, Quebec H3A 0E9, Canada
X. Liu
Affiliation:
Department of Electrical and Comp. Eng., McGill University, Montreal, Quebec H3A 0E9, Canada
S. Zhao
Affiliation:
Department of Electrical and Comp. Eng., McGill University, Montreal, Quebec H3A 0E9, Canada
Z. Mi
Affiliation:
Department of Electrical and Comp. Eng., McGill University, Montreal, Quebec H3A 0E9, Canada
G.A. Botton
Affiliation:
Department of Materials Sci. and Eng., McMaster University, Hamilton, Ontario L8S 4M1, Canada

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1530 - 1531
Copyright
© Microscopy Society of America 2016 

References

[1] Zhao, S, et al, Sci. Rep 5 (2015). p. 8332. S Zhao, SY Woo et al, Nano Lett. 15 (2015), p. 7801.Google Scholar
[2] Albert, S., et al, Appl. Phys. Lett 100 (2012) 231906. M Holmes et al, Nano Lett. 14 (2014), p. 982.Google Scholar
[3] The authors acknowledge funding from NSERC. Electron microscopy work was carried out at the Canadian Centre for Electron Microscopy, a facility supported by NSERC, the Canada Foundation for Innovation under the MSI program, and McMaster University.Google Scholar