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(S)TEM Analysis of the Strain and Morphology of InAs Quantum Dots using GaAs(Sb)(N) Capping Layers for Solar Cell Applications
Published online by Cambridge University Press: 14 March 2016
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- Material Sciences
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- Copyright © Microscopy Society of America 2016
References
[1]Qiu, Y., Gogna, P, Forouhar, S, Stintz, A & Lester, LF, Appl Phys Lett 79 (2001). p. 3570.CrossRefGoogle Scholar
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[4]Costantini, G., Rastelli, A, Manzano, C, Acosta-Diaz, P, Songmuang, R, Katsaros, G, Schmidt, O & Kern, K, Phys. Rev. Lett 96 (2006). p. 226106.CrossRefGoogle Scholar
[5] We acknowledge the Spanish MICINN-MINECO for funding through project MAT2013- 47102-C2, and SCCYT-UCA for technical support.Google Scholar
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