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Solid-Phase Epitaxial Regrowth of GaAs by in-situ Controlled Intermediate Phase Decomposition

Published online by Cambridge University Press:  02 July 2020

J.K. Farrer ,
D.A. Caldwell ,
C.J. Palmstrom  and
C.B. Carter
J.K. Farrer
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue South East, Minneapolis, MN55455
D.A. Caldwell
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue South East, Minneapolis, MN55455
C.J. Palmstrom
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue South East, Minneapolis, MN55455
C.B. Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Avenue South East, Minneapolis, MN55455
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Extract

A transmission electron microscopy (TEM) analysis on the regrowth of GaAs by a two-stage reaction between a metal layer (M) and a GaAs substrate is presented. The first stage of the regrowth process is the consumption of GaAs in a low temperature reaction with the metal layer, producing an intermediate phase of (MxGaAs). A second solid-phase reaction, induced by the deposition of Ga or As, results in the decomposition of the intermediate phase and the epitaxial regrowth of a layer of GaAs. The sample growth and reactions were performed in-situ in a molecular beam epitaxy system, using Ni for the metal and As deposition for the second reaction. TEM data confirm the formation of the ternary phase, NixGaAs, and its subsequent decomposition into NiAs and GaAs by reacting with the deposited As. A layer of AlGaAs, 100 nm thick, was grown in all samples as a marker.

Type
Microscopy of Semiconducting and Superconducting Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 634 - 635
Copyright
Copyright © Microscopy Society of America

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References

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6. This work is supported by AFOSR under Grant No. AF/F49620-95-1-0360.Google Scholar