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Published online by Cambridge University Press: 02 July 2020
Titanium suicides have low resistivity, low contact resistance, and are widely used as interconnects in electronic devices. The most desirable structure is the C54 variant of titanium disilicide (TiSi2). It is typically formed during thermal annealing by a polymorphic transformation from the C49 TiSi2 structure. The C49 to C54 transformation has been studied extensively and there has been substantial effort to devise ways in which to lower the temperature associated with this transformation. This research uses high-resolution imaging (HREM), convergent-beam diffraction (CBED), and energy-dispersive X-ray microanalysis (EDS) to study the development of suicide morphology in response to rapid thermal annealing (RTA). Two sets of specimens have been studied: (i) 32nm Ti thin films on undoped single-crystal Si substrates [Ti/Si] and (ii) 32nm Ti films separated from an undoped single-crystal Si substrate by a 0.12nm thick Mo interlayer [Ti/Mo/Si]. This paper shows structures formed after RTA at a ramp rate 3 °C/sec to 750 °C with a hold of 1 sec