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Scanning TEM EBIC Imaging of Resistive Memory Switching Processes

Published online by Cambridge University Press:  01 August 2018

B. C. Regan ,
Jared Lodico  and
William A. Hubbard
B. C. Regan
Affiliation:
Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA
Jared Lodico
Affiliation:
Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA
William A. Hubbard
Affiliation:
Department of Physics & Astronomy and California NanoSystems Institute, University of California, Los Angeles, CA, USA

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 24 , Supplement S1: Proceedings of Microscopy & Microanalysis 2018 , August 2018 , pp. 1806 - 1807
Copyright
© Microscopy Society of America 2018 

References

[1] Hubbard, W. A., et al, Nano Letters 15 2015) p. 3983–3987.Google Scholar
[2] Lin, Y. S., et al, Journal of Applied Physics 113 2013 064510.Google Scholar
[3] White, E. R., et al, Applied Physics Letters 107 2015 223104.Google Scholar
[4] This work was supported by FAME, one of six centers of STARnet, a Semiconductor Research Corporation program sponsored by MARCO and DARPA, by National Science Foundation (NSF) award DMR-1611036, and by NSF STC award DMR-1548924.Google Scholar