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Quantitative Hrtem of Twin Boundaries in Compound Semiconductors and Metals Using Non-Linear Least-Squares Methods

Published online by Cambridge University Press:  02 July 2020

Dov Cohen ,
Geoffrey H. Campbell ,
Wayne E. King  and
C. Barry Carter
Dov Cohen
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN55455; Chemistry and Materials Science Directorate, University of California, Lawrence Livermore National Laboratory, Livermore, CA94550
Geoffrey H. Campbell
Affiliation:
Chemistry and Materials Science Directorate, University of California, Lawrence Livermore National Laboratory, Livermore, CA94550
Wayne E. King
Affiliation:
Chemistry and Materials Science Directorate, University of California, Lawrence Livermore National Laboratory, Livermore, CA94550
C. Barry Carter
Affiliation:
Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, MN55455;
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Extract

The analysis of the atomic structure of grain boundaries is often performed through the use of high-resolution transmission electron microscopy (HRTEM). A complication of the HRTEM technique is the inability to analyze directly the experimental images in order to determine projected atomic models of lattice defects. Since contrast features in HRTEM images, in general, do not correspond directly to atomic positions, experimental images are typically evaluated qualitatively through comparison with image simulation. Recently, the interest in quantitatively measuring the atomic structure of internal interfaces for comparison with theoretical calculations has motivated the development of computational methodologies to analyze HRTEM images.123 In this paper, the quantitative analysis of HRTEM images of twin boundaries in semiconductors and metals is described.

AΣ=3 coherent twin boundary in GaP was imaged along the <110> zone in a JEOL-4000EX HRTEM at Sandia National Laboratories, Livermore.

Type
Spatially-Resolved Characterization of Interfaces in Materials
Information
Microscopy and Microanalysis , Volume 4 , Issue S2: Proceedings: Microscopy & Microanalysis '98, Microscopy Society of America 56th Annual Meeting, Microbeam Analysis Society 32nd Annual Meeting, Atlanta, Georgia July 12-16, 1998 , July 1998 , pp. 784 - 785
Copyright
Copyright © Microscopy Society of America

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References

1.King, W. E., Campbell, G.H. et.al., accepted for publication J. of Microscopy (1997)Google Scholar
2.Möbus, G., Ultramicroscopy, 65 (1996), 205–216CrossRefGoogle Scholar
3.Hofman, D. and Ernst, F.Ultramicroscopy, 53 (1994), 205–221CrossRefGoogle Scholar
4.Moré, J.J.Garbow, B.S., K.E.Hillstrom, , (Argonne National Laboratory, 1980)Google Scholar
5.Stadelmann, P., Ultramicroscopy, 21 (1987), 131CrossRefGoogle Scholar
6.King, W.E. and Campbell, G.H., Ultramicroscopy, 56 (1994), 46–53CrossRefGoogle Scholar
7.Campbell, G.H., Cohen, D., and King, W.E., Micros. Microanal., 3 (1997) 451–57CrossRefGoogle Scholar
8.Reid, , Acta Cryst.,A39 (1983), 1–13CrossRefGoogle Scholar
9.Bird, D.M., King, Q.A., Acta Cryst., A46 (1989), 202-8CrossRefGoogle Scholar