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Quantitative Analysis of Microstructures by Secondary Ion Mass Spectrometry

Published online by Cambridge University Press:  14 July 2006

Douglas Phinney
Douglas Phinney
Affiliation:
Lawrence Livermore National Laboratory, L-231, P.O. Box 808, Livermore, CA 94551, USA
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Abstract

The focus of this review is on trace-element quantitation of microstructures in solids. This review is aimed at the nonspecialist who wants to know how secondary ion mass spectrometry (SIMS) quantitation is achieved. Despite 35 years of SIMS research and applications, SIMS quantitation remains a fundamentally empirical enterprise and is based on standards. The most used standards are “bulk standards”—solids with a homogeneous distribution of a trace element—and ion-implanted solids. The SIMS systematics of bulk standards and ion-implanted solids are reviewed.

Keywords

SIMSquantitationmicrostructurestrace elements
Type
MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS
Information
Microscopy and Microanalysis , Volume 12 , Issue 4 , August 2006 , pp. 352 - 355
Copyright
© 2006 Microscopy Society of America

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References

REFERENCES

Sobers, R.C., Jr., Franzreb, K., & Williams, P. (2004). Quantitative measurement of O/Si ratios in oxygen-sputtered silicon using 18O implant standards. Appl Surf Sci 231–232, 729–733.CrossRefGoogle Scholar
Wilson, R.G., Stevie, F.A., & Magee, C.W. (1989). Secondary Ion Mass Spectrometry. Chichester, UK: John Wiley & Sons. [Note: The proceedings volumes of the biennial International Conference on Secondary Ion Mass Spectrometry—specifically, SIMS II through SIMS XIV—are an indispensable resource of diverse SIMS quantitation topics. Space limitations of this review prevent proper bibliographic citation of these volumes.]Google Scholar