Hostname: page-component-586b7cd67f-g8jcs Total loading time: 0 Render date: 2024-11-29T09:58:05.279Z Has data issue: false hasContentIssue false

Probing defects and impurity-induced electronic structure changes in single and double-layer hexagonal boron nitride sheets with STEM-EELS

Published online by Cambridge University Press:  23 November 2012

Q. Ramasse
Affiliation:
SuperSTEM Laboratory, Daresbury, United Kingdom
N. Alem
Affiliation:
University of California Berkeley, Berkeley, United Kingdom
A. Zettl
Affiliation:
University of California Berkeley, Berkeley, United Kingdom
O. Yazyev
Affiliation:
Ecole Polytechnique Federale de Lausanne, Lausanne, Switzerland
C. Pan
Affiliation:
University of Manchester, Manchester, United Kingdom
R. Nair
Affiliation:
University of Manchester, Manchester, United Kingdom
R. Jalil
Affiliation:
University of Manchester, Manchester, United Kingdom
R. Zan
Affiliation:
University of Manchester, Manchester, United Kingdom
U. Bangert
Affiliation:
University of Manchester, Manchester, United Kingdom
K.S. Novoselov
Affiliation:
University of Manchester, Manchester, United Kingdom
C. Seabourne
Affiliation:
University of Leeds, Leeds, United Kingdom
A.J. Scott
Affiliation:
University of Leeds, Leeds, United Kingdom
Get access

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Copyright
Copyright © Microscopy Society of America 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)