Hostname: page-component-cd9895bd7-dk4vv Total loading time: 0 Render date: 2024-12-27T11:27:46.769Z Has data issue: false hasContentIssue false
  • English
  • Français

Practical Considerations for Electron Holography on Doped Semiconductor Devices

Published online by Cambridge University Press:  01 August 2002

Alexander Thesen ,
Bernhard G. Frost  and
David C. Joy
Alexander Thesen
Affiliation:
EM Facility, University of Tennessee, Knoxville, TN 37996 and High Temperatures Materials Laboratory, Oak Ridge National Laboratory, Bethel Valley Road 1, Oak Ridge, TN 37831
Bernhard G. Frost
Affiliation:
EM Facility, University of Tennessee, Knoxville, TN 37996 and High Temperatures Materials Laboratory, Oak Ridge National Laboratory, Bethel Valley Road 1, Oak Ridge, TN 37831
David C. Joy
Affiliation:
EM Facility, University of Tennessee, Knoxville, TN 37996 and High Temperatures Materials Laboratory, Oak Ridge National Laboratory, Bethel Valley Road 1, Oak Ridge, TN 37831

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 8 , Issue S02 , August 2002 , pp. 516 - 517
Copyright
Copyright © Microscopy Society of America 2002