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Point and Extended Defects in Ultra Wide Band Gap β-Ga2O3 Interfaces

Published online by Cambridge University Press:  04 August 2017

Jared M Johnson
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, OH.
Sriram Krishnamoorthy
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH.
Siddharth Rajan
Affiliation:
Department of Electrical and Computer Engineering, The Ohio State University, Columbus, OH.
Jinwoo Hwang
Affiliation:
Department of Materials Science and Engineering, The Ohio State University, Columbus, OH.

Abstract

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Type
Abstract
Copyright
© Microscopy Society of America 2017 

References

[1] Higashiwaki, D. M., etal., Applied Physics Letters 103 2013 123511.Google Scholar
[2] Varley, J. B., etal, Journal of Physics: Condensed Matter 23 2011 334212.Google Scholar
[3] Oishi, T., etal., Applied Physics Express 8 2015 031101.Google Scholar
[4] Johnson, J., etal, Ultramicroscopy 172 2017 17.Google Scholar
[5] Hwang, J., etal, Physical Review Letters 111 2013 266101.CrossRefGoogle Scholar
[6] Hwang, W., et al, Applied Physics Letters 104 2014 203111.CrossRefGoogle Scholar