Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-24T02:27:21.506Z Has data issue: false hasContentIssue false
  • English
  • Français

Plan-View Preparation of TEM Specimens from Thin Films Using Adhesive Tape

Published online by Cambridge University Press:  17 October 2011

Zsolt Czigány
Zsolt Czigány*
Affiliation:
Research Institute for Technical Physics and Materials Science, Thin Film Physics Laboratory, H-1121 Budapest, Konkoly-Thege M. út 29-33, Hungary
*
Corresponding author. E-mail: [email protected]
Get access

Abstract

A simple plan-view sample preparation technique for transmission electron microscopy (TEM) specimens is proposed for thin films by tearing-off the film with adhesive tape. The demand for very thin samples is highest for nanostructured materials where the structure of 2–5 nm sized features (grains) needs to be resolved; therefore, overlapping of nanometer-sized features should be avoided. The method provides thin areas at the fracture edges of plan-view specimens with thickness in the range of the grain size in the film allowing for artifact free high-resolution TEM imaging. Nanostructured materials typically fracture between the grains providing areas with the thickness of the grain size. Besides the swiftness of the method, the samples are free of surface amorphization artifacts, which can occur in ion beam milling up to 1 nm depth even at low energy ion bombardment. The thin film tear-off technique is demonstrated on a CuMn alloy thin film with grain size of 2 nm.

Keywords

artifact freeplan-view sample preparation techniqueHRTEMnanostructurethin films
Type
Software and Techniques Development
Information
Microscopy and Microanalysis , Volume 17 , Issue 6 , December 2011 , pp. 886 - 888
Copyright
Copyright © Microscopy Society of America 2011

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Barna, Á., Pécz, B. & Menyhárd, M. (1998). Amorphisation and surface morphology development at low-energy ion milling. Ultramicroscopy 70, 161–171.CrossRefGoogle Scholar
Czigány, Zs., Neidhardt, J., Brunell, I.F. & Hultman, L. (2003). Imaging of fullerene-like structures in CNx thin films by electron microscopy; sample preparation artefacts due to ion-beam milling. Ultramicroscopy 94, 163–173CrossRefGoogle ScholarPubMed
McCaffrey, J.P. (1991). Small-angle cleavage of semiconductors for transmission electron microscopy. Ultramicroscopy 38, 149–157.CrossRefGoogle Scholar