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The Perfect Cut: Focused Ion Beam Preparation for In Situ TEM

Published online by Cambridge University Press:  23 September 2015

Wayne Harlow
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA
Michael Jablonski
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA
James Hart
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA
Christopher Barr
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA
Hessam Ghassemi
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA
Osman El-Atwani
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA
Mitra L. Taheri
Affiliation:
Drexel University, Department of Materials Science & Engineering, Philadelphia, PA, USA

Abstract

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Type
Abstract
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Ghassemi, H., Lang, A., Johnson, C., Wang, R., Song, B., Phillips, P., Qiao, Q., Klie, R.F., Xing, H.G. & Taheri., M.L. “Evolution of strain in aluminum gallium nitride/gallium nitride high electron mobility transistors under on-state bias”. Journal of Applied Physics 114 (2013) 064507.CrossRefGoogle Scholar
[2] Winkler, C.R., Jablonski, M.L., Damodaran, A.R., Jambunathan, K., Martin, L.W. & Taheri., M.L., “Accessing intermediate ferroelectric switching regimes with time-resolved transmission electron microscopy”. Journal of Applied Physics 112 (2012) 052013.CrossRefGoogle Scholar
[3] Winkler, C.R., Damodaran, A.R., Karthik, J., Martin, L.W. & Taheri., M.L., “Direct observation of ferroelectric domain switching in varying electric field regimes using in situ TEM”. Micron 43 (2012) 11211126.CrossRefGoogle Scholar
[4] Winkler, C.R., Jablonski, M.L., Ashraf, K., Damodaran, A.R., Jambunathan, K., Hart, J.L., Wen, J., Miller, D.J., Martin, L.W., Salahuddin, S. & Taheri., M.L., “Real-time observation of local strain effects on non-volatile ferroelectric memory storage mechanisms”. Nano Letters 14.6 (2014) 36173622.Google Scholar
[5] The authors acknowledge funding from the Office of Naval Research under contract number N000141410058, funding from the United States Department of Energy, Basic Energy Sciences under the Early Career program through contract DE-SC0008274, funding from the National Science Foundation's Faculty Early Career Program under contract #1150807, funding from the Office of Naval Research through contract N00014-1101-0296, and funding from the Department of Energy's Nuclear Energy University Program under contract NE0000315..Google Scholar