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Optical Proprties of Tin Thin Film Obtained by Applying a Near Free Elctron Aproximation Using The Eels in Transmission Mode

Published online by Cambridge University Press:  02 July 2020

C. González-Valenzuela
Affiliation:
Centro de Investigaciόn en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch., 31109, México
R. González
Affiliation:
Centro de Investigaciόn en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch., 31109, México
F. Espinosa-Magaña
Affiliation:
Centro de Investigaciόn en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch., 31109, México
R. Martínez-Sanchez
Affiliation:
Centro de Investigaciόn en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch., 31109, México
A. Duarte-Möller
Affiliation:
Centro de Investigaciόn en Materiales Avanzados, S. C. Miguel de Cervantes 120, Complejo Industrial Chihuahua, Chihuahua, Ch., 31109, México
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Abstract

A TiN thin film was grown by the DC-Sputtering technique was characterized by EELS spectroscopy in order to obtain the optical quantities, ε12 and the refractive index η. Optical properties were obtained analyzing the low loss window located at an energy less to 50 eV respect to the elastic peak. A primary energy of 200 keV and a spot size of 440 nm with an average acquisition time of 5 min were used. The optical properties were calculated using the Kramers - Kronig relations.

Figure 1 shows the PEELS spectra in the low loss region for TiN thin film. As we can see, the most prominent plasmon loss peak characterizing TiN appears at an energy loss of 24 eV. The origin of the loss peak located at 17 eV is interpreted as surface plasmon. in order to obtain a better approximation, we use a near-free electron model and we have compared with the respective optical quantities calculated with the conventional formalism.

Type
Quantitative Transmission Electron Microscopy of Interfaces (Organized by M. Rüehle, Y. Zhu and U. Dahmen)
Copyright
Copyright © Microscopy Society of America 2001

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References

1.Contreras-López, O., et al. Jour, of elect. Spect. and relat. Phen. 105 (1999)129CrossRefGoogle Scholar
2.Egerton, R.F.Electron Energy Loss Spectroscopy in Electron Microscopy. Plenumm Press Second Edition (1996)CrossRefGoogle Scholar
3.Ricardo González, V. M. Sc. Thesis in Materials Science., Advanced Materials Research Center, August 2000. MexicoGoogle Scholar