Hostname: page-component-586b7cd67f-2plfb Total loading time: 0 Render date: 2024-11-28T23:47:37.511Z Has data issue: false hasContentIssue false
  • English
  • Français

Observation of the Potential Distribution in GaN-Based Devices by a Scanning Electron Microscope

Published online by Cambridge University Press:  23 September 2015

T. Karumi  and
S. Tanaka
T. Karumi
Affiliation:
Dept. Electrical Eng., Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan
S. Tanaka
Affiliation:
EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 275 - 276
Copyright
Copyright © Microscopy Society of America 2015 

References

References:

[1] Cherns, D., et al., Solid State Commun. 111, 281 (1999).Google Scholar
[2] Cai, J. & Ponce, F. A., J. Appl. Phys. 91, 9856 (2002).Google Scholar
[3] Wu, Z. H., et al., Appl. Phys. Lett. 91, 041915 (2007).CrossRefGoogle Scholar
[4] Deguch, M., et al., J. Electronic Materials 39, 815 (2010).Google Scholar
[5] Sealy, C. P., et al., J. Electron Microscopy 49, 311 (2000).CrossRefGoogle Scholar
[6] Kaestner, B., et al., Appl. Phys. Lett. 84, 2109 (2004).Google Scholar
[7] We thank Professor H. Amano (Nagoya University) for providing the samples.Google Scholar