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Nucleation of Aln on 6h-Sic (0001) by Sublimation Technique

Published online by Cambridge University Press:  02 July 2020

B. Liu ,
L.R. Walker ,
Y. Shi  and
J.H. Edgar
B. Liu
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS66506-5102
L.R. Walker
Affiliation:
Oak Ridge National Laboratory, Oak Ridge, TN37831-6139
Y. Shi
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS66506-5102
J.H. Edgar
Affiliation:
Department of Chemical Engineering, Kansas State University, Manhattan, KS66506-5102
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Abstract

A study of the initial stage of AIN growth on SiC substrate by the sublimation re-condensation technique was undertaken to understand the origin of crystal defects in bulk AIN crystals. When SiC was used as a seed crystal the AIN crystals did not completely coalesce, and individual grains were observed. Such crystal growth features were determined by the initial nucleation of the crystals. in this study, the nucleation of AIN on 6H-SiC(0001) was investigated by Scanning Electronic Microscopy (SEM), S-4700 Hitachi, and Electron Backscattered Diffraction (EBSD), Thermo Noran Phase ID.

At high temperatures (>1800°C) in the presence of AIN, the surface of the SiC substrate first decomposed along remnant polishing scratches[l], ultimately leaving hexagonal hillocks; simultaneously, the AIN nucleated on these SiC hillocks. Surprisingly, the AIN nuclei appeared out of alignment with the underlying SiC hillocks. By measuring several points from the SEM image (figure 1), this misorientation is in the range of 15° to 30°.

Type
Diffraction Techniques in TEM and SEM
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 370 - 371
Copyright
Copyright © Microscopy Society of America 2001

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References

1.Liu, B. et al, MRS Proceedings 639,G3.13.Google Scholar
2.Ponce, F.A. et al, Physical Review B, 53(11), (1996) 7473.CrossRefGoogle Scholar
3. Research sponsored by the Assistant Secretary for Energy Efficiency and Renewable Energy, Office of Transportation Technologies, as part of the High Temperature Materials Laboratory User Program, Oak Ridge National Laboratory, managed by UT-Battelle, LLC, for the U.S. Department of Energy under contract number DE-AC05-00OR22725.Google Scholar