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A Novel Technique for Probe Intensity Profile Characterisation in the Environmental Scanning Electron Microscope

Published online by Cambridge University Press:  02 July 2020

M.R. Phillips ,
M. Toth  and
D. Drouin
M.R. Phillips
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney PO Box 123, Broadway, NSW, 2007, Australia
M. Toth
Affiliation:
Microstructural Analysis Unit, University of Technology, Sydney PO Box 123, Broadway, NSW, 2007, Australia
D. Drouin
Affiliation:
Départment de génie electrique et génie informatique, Université de Sherbrooke, Sherbrooke, Québec, CanadaJ1K 2R1
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Extract

The environmental scanning electron microscope (ESEM) allows imaging and analysis in a gaseous environment at pressures up to 20 torr. Gas phase scattering of primary electrons leads to a loss of useable probe current and produces an electron skirt around the beam that can degrade the spatial resolution in microanalytical studies. Progress in ESEM microanalysis requires accurate modeling and measurement of the beam intensity profile. Previously, x-ray techniques and beam sensitive materials have been used to measure the extent of the skirt. These investigations have yielded inconsistent skirt distances possibly due to dose dependence of the measurement techniques. We present a new, high gain method to measure the useable probe current and skirt profile using the electron beam induced current (EBIC) from a P-N junction.

The interface of an N- and a P-type semiconductor contains an electrostatic donor-acceptor dipole (“depletion layer”) created by an electron-hole recombination energy minimization mechanism.

Type
Environmental Scanning Electron Microscopy and Other Wet Work
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 294 - 295
Copyright
Copyright © Microscopy Society of America

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References

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