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Novel Preparation of Precision Planar TEM Specimens for Integrated Circuits Using Dual-Beam Focused Ion Beam

Published online by Cambridge University Press:  02 July 2020

Zhiyong Ma
Affiliation:
Intel Corporation, Oregon Materials Technology and Failure Analysis, 2501 NW 229, thStreet, Hillsboro, OR97124
Brian Davies
Affiliation:
Intel Corporation, Oregon Materials Technology and Failure Analysis, 2501 NW 229, thStreet, Hillsboro, OR97124
Jeremy Brandt
Affiliation:
Intel Corporation, Oregon Materials Technology and Failure Analysis, 2501 NW 229, thStreet, Hillsboro, OR97124
Brian Baker
Affiliation:
Intel Corporation, Oregon Materials Technology and Failure Analysis, 2501 NW 229, thStreet, Hillsboro, OR97124
Karen Headley
Affiliation:
Intel Corporation, Oregon Materials Technology and Failure Analysis, 2501 NW 229, thStreet, Hillsboro, OR97124
Barbara Miner
Affiliation:
Intel Corporation, Oregon Materials Technology and Failure Analysis, 2501 NW 229, thStreet, Hillsboro, OR97124
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Extract

Preparation of precision planar TEM specimen for failure analysis in microelectronics industry has become increasingly difficult as the critical dimensions of integrated circuits (ICs) continue to shrink down to deep sub-micron regime. Accurate defect localization and endpoint control of specimen final thinning are critical steps leading to successful specimens and defect characterization. Conventional dimple and ion-mill method becomes inadequate for this class of specimen preparation due to poor optical imaging resolution, non-planar polishing, lack of flexible ion beam control and in situ process monitoring for endpoint control. These problems are exacerbated by the high density and a wide range of materials found in IC device structures. In this paper we present a novel method employing dual-beam focused ion beam (FIB) which significantly improves upon these difficulties.

Type
Precision Specimen Preparation
Copyright
Copyright © Microscopy Society of America

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References

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