Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-23T16:41:20.432Z Has data issue: false hasContentIssue false

Nanoscale Strain and Composition Mapping in Ionic Thin Film Heterostructures for Resistive Switching Devices

Published online by Cambridge University Press:  25 July 2016

William J. Bowman
Affiliation:
School for the Engineering of Matter, Transport and Energy, Arizona State University, USA Electrochemical Materials Group, ETH Zürich, Zürich, Switzerland
Sebastian Schweiger
Affiliation:
Electrochemical Materials Group, ETH Zürich, Zürich, Switzerland
Amith Darbal
Affiliation:
AppFive LLC, Tempe, AZ, USA
Peter Crozier
Affiliation:
School for the Engineering of Matter, Transport and Energy, Arizona State University, USA
Jennifer L.M. Rupp
Affiliation:
Electrochemical Materials Group, ETH Zürich, Zürich, Switzerland

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2016 

References

References:

[1] Schweiger, S., etal., ACS Nano 8:5 (2016). p. 5032.Google Scholar
[2] Darbal, A., et al., Microsc. & Microanal 19:S2 (2013). p. 702.Google Scholar
[3] We acknowledge ScopeM at ETH Zürich and the John M. Cowley Center for High Resolution EM at ASU, and thank the staff for their support. Work was supported by the Swiss NSF (project numbers 155986 and 138914). W.J.B. was a Swiss Government Excellence Scholarship holder for the academic year 2015-2016 (ESKAS 2015.1183); and acknowledges financial support of the US NSF Graduate Research Fellowship Program (DGE-1311230), and NSF DMR-1308085.Google Scholar