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Microstructures in Pressureless Sintered AIN-SiC Ceramics

Published online by Cambridge University Press:  02 July 2020

Y.D. Yu
Affiliation:
Department of Physics, Norwegian University of Science and Technology, N-7491, Trondheim, Norway
I.-L. Tangen
Affiliation:
Department of Chemistry, Norwegian University of Science and Technology, N-7491, Trondheim, Norway
M.-A. Einarsrud
Affiliation:
Department of Chemistry, Norwegian University of Science and Technology, N-7491, Trondheim, Norway
R. Høier
Affiliation:
Department of Physics, Norwegian University of Science and Technology, N-7491, Trondheim, Norway
T. Grande
Affiliation:
Department of Chemistry, Norwegian University of Science and Technology, N-7491, Trondheim, Norway
J.K. Solberg
Affiliation:
Department of Materials Technology and Electrochemistry, Norwegian University of Science and Technology, N-7491, Trondheim, Norway
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Abstract

Aluminum nitride (AlN) is known to have a high thermal conductivity and is one of the valid candidates as substrate material for integrated circuits. The material also has a potential in metal production and handling. However, AlN has only a moderate flexural strength and fracture toughness. It has been reported that SiCA1N composites (SiC/AIN ratio ≥ 50%) can be manufactured by means of pressureless sintering. Furthermore, it is possible to fabricate self-reinforced SiC-based materials with whisker-like crystals in composite ceramics by choosing appropriate sintering additive and condition. in the present study, we investigated the possibility to prepare in-situ formed SiC-whisker reinforced AlN-materials and studied the microstructure of the composite.

An AlN-SiC composite ceramic sample (20 vol% SiC) was prepared for the investigation. The AlN-SiC composite was processed from a mixture of the starting powders with 2.5 wt% Al2O3-Y2O3 as a sintering additive.

Type
Advanced Composites
Copyright
Copyright © Microscopy Society of America 2001

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References

references

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5. The authors thank The Research Council of Norway for financial support.Google Scholar