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Microstructures in Pressureless Sintered AIN-SiC Ceramics
Published online by Cambridge University Press: 02 July 2020
Abstract
Aluminum nitride (AlN) is known to have a high thermal conductivity and is one of the valid candidates as substrate material for integrated circuits. The material also has a potential in metal production and handling. However, AlN has only a moderate flexural strength and fracture toughness. It has been reported that SiCA1N composites (SiC/AIN ratio ≥ 50%) can be manufactured by means of pressureless sintering. Furthermore, it is possible to fabricate self-reinforced SiC-based materials with whisker-like crystals in composite ceramics by choosing appropriate sintering additive and condition. in the present study, we investigated the possibility to prepare in-situ formed SiC-whisker reinforced AlN-materials and studied the microstructure of the composite.
An AlN-SiC composite ceramic sample (20 vol% SiC) was prepared for the investigation. The AlN-SiC composite was processed from a mixture of the starting powders with 2.5 wt% Al2O3-Y2O3 as a sintering additive.
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- Advanced Composites
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- Copyright © Microscopy Society of America 2001