Hostname: page-component-cd9895bd7-jn8rn Total loading time: 0 Render date: 2024-12-28T19:00:00.998Z Has data issue: false hasContentIssue false

Microstructural Characterization of Closely-Lattice-Matched AlIn(Ga)N Alloys for High Electron Mobility Transistors

Published online by Cambridge University Press:  08 April 2017

L Zhou
Affiliation:
Arizona State University
L Kirste
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Germany
T Lim
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Germany
R Aidam
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Germany
O Ambacher
Affiliation:
Fraunhofer Institute for Applied Solid State Physics, Germany
D Smith
Affiliation:
Arizona State University

Extract

Core share and HTML view are not available for this content. However, as you have access to this content, a full PDF is available via the ‘Save PDF’ action button.

Extended abstract of a paper presented at Microscopy and Microanalysis 2011 in Nashville, Tennessee, USA, August 7–August 11, 2011.

Type
Abstract
Copyright
Copyright © Microscopy Society of America 2011