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Microstructural characteristics of GaN/AlN thin films grown on a Si (110) substrate by molecular beam epitaxy: Transmission electron microscopy study

Published online by Cambridge University Press:  25 July 2016

Y.H. Kim ,
J.H. Lee ,
S.J. Ahn ,
Y.K. Noh ,
M.D. Kim  and
J.E. Oh
Y.H. Kim
Affiliation:
Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 34113, Republic of Korea
J.H. Lee
Affiliation:
Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 34113, Republic of Korea
S.J. Ahn
Affiliation:
Korea Research Institute of Standards and Science, 267 Gajeong-Ro, Yuseong-Gu, Daejeon 34113, Republic of Korea
Y.K. Noh
Affiliation:
IV Works Co., Ansan, Kyungki-do 425-833, Republic of Korea Division of Electrical and Computer Engineering, Hanyang University, Ansan city, Kyunggi-do 15588, Republic of Korea
M.D. Kim
Affiliation:
Department of Physics, Chungnam National University, 99 Daehak-Ro, Yuseong-Gu, Daejeon 34134, Republic of Korea
J.E. Oh
Affiliation:
Division of Electrical and Computer Engineering, Hanyang University, Ansan city, Kyunggi-do 15588, Republic of Korea

Abstract

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Information
Microscopy and Microanalysis , Volume 22 , Supplement S3: Proceedings of Microscopy & Microanalysis 2016 , July 2016 , pp. 1576 - 1577
Copyright
© Microscopy Society of America 2016 

References

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[10] This research was supported by Nano-Material Technology Development Program (Next-Generation Nano Fundamental Technology Development Program) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (grant number 2011-0030233).Google Scholar