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The Mechanism of {113} Defect Formation in Silicon: Clustering of Interstitial–Vacancy Pairs Studied by In Situ High-Resolution Electron Microscope Irradiation

Published online by Cambridge University Press:  06 August 2013

Ludmila I. Fedina ,
Se Ahn Song ,
Andrey L. Chuvilin ,
Anton K. Gutakovskii  and
Alexander V. Latyshev
Ludmila I. Fedina
Affiliation:
Institute of Semiconductor Physics, pr. Lavrentjeva 13, Novosibirsk, 630090, Russia
Se Ahn Song*
Affiliation:
Quality Headquarters, Dongjin Semichen Co. Ltd., Hwaseong, 445-935, Korea
Andrey L. Chuvilin
Affiliation:
CIC nanoGUNE Consolider, Av. de Tolosa 76, 20018 San Sebastian, Spain
Anton K. Gutakovskii
Affiliation:
Institute of Semiconductor Physics, pr. Lavrentjeva 13, Novosibirsk, 630090, Russia
Alexander V. Latyshev
Affiliation:
Institute of Semiconductor Physics, pr. Lavrentjeva 13, Novosibirsk, 630090, Russia
*
*Corresponding author. E-mail: [email protected]
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Abstract

We report the direct visualization of point defect clustering in {113} planes of silicon crystal using a transmission electron microscope, which was supported by structural modeling and high-resolution electron microscope image simulations. In the initial stage an accumulation of nonbonded interstitial–vacancy (I–V) pairs stacked at a distance of 7.68 Å along neighboring atomic chains located on the {113} plane takes place. Further broadening of the {113} defect across its plane is due to the formation of planar fourfold coordinated defects (FFCDs) perpendicular to chains accumulating I–V pairs. Closely packed FFCDs create a sequence of eightfold rings in the {113} plane, providing sites for additional interstitials. As a result, the perfect interstitial chains are built on the {113} plane to create an equilibrium structure. Self-ordering of point defects driven by their nonisotropic strain fields is assumed to be the main force for point defect clustering in the {113} plane under the existence of an energy barrier for their recombination.

Keywords

silicon {113} defectinterstitial–vacancy clusteringself-orderingfourfold coordinated defectsformation mechanismin situ HR-TEMdefect modelingHREM simulation
Type
Research Article
Information
Microscopy and Microanalysis , Volume 19 , Supplement S5: IUMAS , August 2013 , pp. 38 - 42
Copyright
Copyright © Microscopy Society of America 2013 

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References

Alippi, P. & Colombo, L. (2002). Lattice-strain field induced by {311} self-interstitial defects in silicon. Phys Rev B 62, 1815–1820.Google Scholar
Al-Mushadani, O.K. & Needs, R.J. (2003). Free-energy calculations of intrinsic point defects in silicon. Phys Rev B 68, 235205–235213.Google Scholar
Aseev, A., Fedina, L., Hoehl, D. & Barsch, H. (1994). Clusters of Interstitial Atoms in Silicon and Germanium. Berlin, Germany: Academy Verlag.Google Scholar
Chou, C.T., Cockayne, D.J.H., Zou, J., Kringhoj, P. & Jagadish, C. (1995). {111} defects in 1-MeV-silicon-ion-implanted silicon. Phys Rev B 52, 17223–17230.Google Scholar
Chuvilin, A. & Kaizer, U. (2005). On the peculiarities of CBED pattern formation revealed by multislice simulation. Ultramicroscopy 104, 73–82.Google Scholar
Fedina, L., Gutakovskii, A. & Aseev, A. (2000a). In situ HREM irradiation study of an intrinsic point defects clustering in FZ-Si. Cryst Res Technol 35, 775–786.Google Scholar
Fedina, L., Gutakovskii, A., Aseev, A., Van Landuyt, J. & Vanhellemont, J. (1997). The intrinsic point defect clustering in Si: A study by HVEM and HREM in situ electron irradiation. In In Situ Microscopy in Material Research, Gai, P. (Ed.), p. 63. Dordrecht: Kluwer.Google Scholar
Fedina, L., Gutakovskii, G., Aseev, A., Van Landuyt, J. & Vanhellemont, J. (1998). On the mechanism of {111}-defect formation in silicon studied by in situ electron irradiation in a high resolution electron microscope. Phil Mag A 77, 423–435.Google Scholar
Fedina, L., Gutakovskii, A., Aseev, A., Van Landuyt, J. & Vanhellemont, J. (1999). Extended defects formation in Si crystals by clustering of intrinsic point defects studied by in-situ electron irradiation in an HREM. Phys Stat Sol (a) 171, 147–158.Google Scholar
Fedina, L., Lebedev, O.I., Van Tendeloo, G., Van Landuyt, J., Mironov, O.A. & Parker, E.H.C (2000b). In situ HREM irradiation study of point-defect clustering in MBE-grown strained Si1-xGex/(001)Si structures. Phys Rev B 61, 10336–10345.Google Scholar
Gargoni, F., Gatti, C.L. & Colombo, L. (1998). Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes. Phys Rev B 57, 170–177.Google Scholar
Gharaibeh, M., Estreicher, S.K., Fedders, P.A. & Ordejón, P. (2001). Self-interstitial-hydrogen complexes in silicon. Phys Rev B 64, 235211-1–235211-7.Google Scholar
Goedecker, S., Deutsch, T. & Billard, L. (2002). A fourfold coordinated point defect in silicon. Phys Rev Lett 88, 235501–235504.Google Scholar
Kim, J., Kirchhoff, F., Wilkins, J.W. & Khan, F.S. (2000). Stability of Si-interstitial defects: From point to extended defects. Phys Rev Lett 84, 503–506.Google Scholar
Kim, J., Wilkins, J.W., Khan, F.S. & Canning, A. (1997). Extended Si {311} defects. Phys Rev B 55, 16186–16197.Google Scholar
Leung, W.K., Needs, R.J., Rajagopal, G., Itoh, S. & Ihara, S. (1999). Calculations of silicon self-interstitial defects. Phys Rev Lett 83, 2351–2354.Google Scholar
Napolitani, E., Bisognin, G., Bruno, E., Mastromatteo, M., Scapellato, G.G., Boninelli, S., De Salvador, D., Mirabella, S., Spinella, C., Carnera, A. & Priolo, F. (2010). Transient enhanced diffusion of B mediated by self-interstitials in preamorphized Ge. Appl Phys Lett 96, 201906–201909.Google Scholar
Ogut, S. & Chelikovsky, J.R. (2001). Ab initio investigation of point defects in bulk Si and Ge using a cluster method. Phys Rev B 64, 245206–245217.Google Scholar
Richie, D.A, Kim, J., Barr, S.A., Hazzard, K.R.A., Hennig, R. & Wilkins, J.W. (2004). Complexity of small silicon self-interstitial defects. Phys Rev Lett 92, 45501–45504.Google Scholar
Takeda, S. & Horiuchi, S. (1994). Electron diffraction channeling effect on defect formation in Si with 110 zone axis incidence. Ultramicroscopy 56, 144–162.Google Scholar
Takeda, S., Kohyama, M. & Ibe, K. (1994). Interstitial defects on {113} in Si and Ge: Line defect configuration incorporated with a self-interstitial atom chain. Phil Mag A 70, 287–312.Google Scholar
Tang, M., Colombo, L., Zhu, J. & Diaz de la Rubia, T. (1997). Intrinsic point defects in crystalline silicon: Tight-binding molecular dynamics studies of self-diffusion, interstitial-vacancy recombination, and formation volumes. Phys Rev B 55, 14279–14289.Google Scholar
Watkins, G.D. (1976). EPR studies of lattice defects in semiconductors. In Defects and Their Structure in Non Metallic Solids. Henderson, B. & Hughes, A.E. (Eds.), p. 203. New York: Plenum Press.Google Scholar