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Measuring the Strain Sensitivity in Si (001) Electron Channeling Patterns Using Higher-order Laue Zone Line Shifts

Published online by Cambridge University Press:  27 August 2014

Joel Lammatao ,
Lisa Chan ,
Tony Owens ,
Marc De Graef  and
Yoosuf N. Picard
Joel Lammatao
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA 15213, United States
Lisa Chan
Affiliation:
TESCAN USA Inc., 508 Thomson Park Drive, Cranberry Township, PA 16066, United States
Tony Owens
Affiliation:
TESCAN USA Inc., 508 Thomson Park Drive, Cranberry Township, PA 16066, United States
Marc De Graef
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA 15213, United States
Yoosuf N. Picard
Affiliation:
Carnegie Mellon University, Department of Materials Science and Engineering, Pittsburgh, PA 15213, United States

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 42 - 43
Copyright
Copyright © Microscopy Society of America 2014 

References

References:

[1] Akaogi, T., et al, J. Electron Microsc. 53 (2004), 593-600.Google Scholar
[2] Kramer, S., Mayer, J. J. Microsc. 194 (1999), 2-11.Google Scholar
[3] Kozubowski, J.A., Keller, R.R., Gerberich, W.W. J. Appl. Cryst. 24 (1991), 102-107.Google Scholar