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The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors

Published online by Cambridge University Press:  14 July 2006

Pierre-François Staub
Pierre-François Staub
Affiliation:
Cameca, 103, Bd. St.-Denis, 92403, Courbevoie cedex, France
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Abstract

We describe the recent introduction of low energy X-ray emission spectrometry as a metrology technique to control the fabrication process in the integrated circuit industry. The benefits of this particular analytical method and the wide field of potential applications are addressed.

Keywords

LEXESmetrologyprocess controlshallow implantsthin films
Type
MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS
Information
Microscopy and Microanalysis , Volume 12 , Issue 4 , August 2006 , pp. 340 - 346
Copyright
© 2006 Microscopy Society of America

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References

REFERENCES

Bonnelle, C., Vergand, F., Jonnard, P., André, J.-M., Staub, P.-F., Avila, P., Chargelègue, P., Fontaine, M.-F., Laporte, D., Paquier, P., Ringuenet, A., & Rodriguez, B. (1994). Instrument for research on interfaces and surfaces. Rev Sci Instrum 65, 3466–3471.CrossRefGoogle Scholar
Staub, P.-F. (1998). IntriX: A numerical model for electron probe analysis at high depth resolution. Part I—Theoretical description. X-Ray Spect 27, 43–57.Google Scholar
Staub, P.-F., Hombourger, C., & Schuhmacher, M. (2002). Quantitative determination of dopant dose in shallow implants using the low energy X-ray emission spectroscopy technique. J Vac Sci Technol B 20, 436–440.CrossRefGoogle Scholar