Hostname: page-component-78c5997874-j824f Total loading time: 0 Render date: 2024-11-04T18:32:49.789Z Has data issue: false hasContentIssue false
  • English
  • Français

The Low Energy X-ray Spectrometry Technique as Applied to Semiconductors

Published online by Cambridge University Press:  14 July 2006

Pierre-François Staub
Pierre-François Staub
Affiliation:
Cameca, 103, Bd. St.-Denis, 92403, Courbevoie cedex, France
Get access

Abstract

We describe the recent introduction of low energy X-ray emission spectrometry as a metrology technique to control the fabrication process in the integrated circuit industry. The benefits of this particular analytical method and the wide field of potential applications are addressed.

Keywords

LEXESmetrologyprocess controlshallow implantsthin films
Type
MODERN DEVELOPMENTS AND APPLICATIONS IN MICROBEAM ANALYSIS
Information
Microscopy and Microanalysis , Volume 12 , Issue 4 , August 2006 , pp. 340 - 346
Copyright
© 2006 Microscopy Society of America

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

Bonnelle, C., Vergand, F., Jonnard, P., André, J.-M., Staub, P.-F., Avila, P., Chargelègue, P., Fontaine, M.-F., Laporte, D., Paquier, P., Ringuenet, A., & Rodriguez, B. (1994). Instrument for research on interfaces and surfaces. Rev Sci Instrum 65, 3466–3471.CrossRefGoogle Scholar
Staub, P.-F. (1998). IntriX: A numerical model for electron probe analysis at high depth resolution. Part I—Theoretical description. X-Ray Spect 27, 43–57.Google Scholar
Staub, P.-F., Hombourger, C., & Schuhmacher, M. (2002). Quantitative determination of dopant dose in shallow implants using the low energy X-ray emission spectroscopy technique. J Vac Sci Technol B 20, 436–440.CrossRefGoogle Scholar