Hostname: page-component-78c5997874-v9fdk Total loading time: 0 Render date: 2024-11-08T00:15:52.541Z Has data issue: false hasContentIssue false

Lab-based Nanoscale 3D X-Ray Microscopy for Failure Analysis on Advanced Semiconductors

Published online by Cambridge University Press:  10 August 2018

Christian Schmidt*
Affiliation:
Carl Zeiss SMT, Process Control Solutions, Pleasanton, CA, USA
Stephen T. Kelly
Affiliation:
Carl Zeiss Microscopy, Pleasanton, CA, USA
*
*Corresponding author, [email protected]

Abstract

Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Copyright
© Microscopy Society of America 2018 

References

[1] Schmidt, C., et al, Use of 3D X-Ray Microscopy for BEOL and Advanced Packaging Failure Analysis, International Symposium for Testing and Failure Analysis (ISTFA), (2017).Google Scholar
[2] Xradia, ZEISS 520 Versa, Submicron X-Ray Imaging, Product Information V2.0. .Google Scholar
[3] Augur, R. The struggle to keep scaling BEOL, and what we can do next, IEEE International Electronic Device Meeting (IEDM) (2016).Google Scholar
[4] Schmidt, C., et al, Use of 3D X-Ray Microscopy for BEOL and Advanced Packaging Failure Analysis, International Symposium for Testing and Failure Analysis (ISTFA), (2017)..Google Scholar
[5] Schmidt, C., et al, Novel sample preparation and High-Resolution X-ray tomography for Package FA, International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA), (2017).Google Scholar