Hostname: page-component-586b7cd67f-rcrh6 Total loading time: 0 Render date: 2024-11-28T07:34:04.569Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Ordered-Vacancy Structures in Ga2(Se0.33Te0.67)3 Semiconductors via High-Resolution Electron Microscopy

Published online by Cambridge University Press:  23 November 2012

N. Abdul-Jabbar ,
M. Boese ,
E. Bourret-Courchesne  and
B. Wirth
N. Abdul-Jabbar
Affiliation:
Nuclear Engineering, University of California, Berkeley, CA
M. Boese
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA
E. Bourret-Courchesne
Affiliation:
Lawrence Berkeley National Laboratory, Berkeley, CA
B. Wirth
Affiliation:
University of Tennessee, Knoxville, TN
Get access

Abstract

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

Type
Research Article
Information
Microscopy and Microanalysis , Volume 18 , Issue S2: Proceedings of Microscopy & Microanalysis 2012 , July 2012 , pp. 370 - 371
Copyright
Copyright © Microscopy Society of America 2012

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)