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In-Situ Characterization of the Evolution of Defects in AlGaN\GaN HEMTs in the On-state and Off-state condition

Published online by Cambridge University Press:  27 August 2014

A. Lang ,
H. Ghassemi ,
D. Meyer  and
M. L. Taheri
A. Lang
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19140
H. Ghassemi
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19140
D. Meyer
Affiliation:
U.S. Naval Research Laboratory, Washington, DC 20375
M. L. Taheri
Affiliation:
Department of Materials Science and Engineering, Drexel University, Philadelphia, PA, 19140

Abstract

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Type
Abstract
Information
Microscopy and Microanalysis , Volume 20 , Supplement S3: Proceedings of Microscopy & Microanalysis 2014 , August 2014 , pp. 1626 - 1627
Copyright
Copyright © Microscopy Society of America 2014 

References

[1] Morkoç, H. Handbook of Nitride Semiconductors and Devices, GaN-based Optical and Electronic Devices (2008: Wiley.Google Scholar
[2] Joh, J., et al., Microelectronics Reliability, 51(2): p. 201-206 (2011).Google Scholar
[3] Ghassemi, H, et al., Journal of Applied Physics, 114(6) 064507 (2013).Google Scholar