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In-situ Characterization of MoS2 Based Field Effect Transistors during Ion Irradiation

Published online by Cambridge University Press:  30 July 2020

Gregor Hlawacek ,
Zahra Fekri ,
Panish Chava  and
Artur Erbe
Gregor Hlawacek
Affiliation:
Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Sachsen, Germany
Zahra Fekri
Affiliation:
Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Sachsen, Germany
Panish Chava
Affiliation:
Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Sachsen, Germany
Artur Erbe
Affiliation:
Helmholtz-Zentrum Dresden-Rossendorf, Dresden, Sachsen, Germany

Abstract

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Type
Crystallography at the Nanoscale and MicroED with Electrons and X-rays
Information
Microscopy and Microanalysis , Volume 26 , Supplement S2 , August 2020 , pp. 294 - 296
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Copyright
Copyright © Microscopy Society of America 2020

References

Jadwiszczak, J., et al. , MoS2 Memtransistors Fabricated by Localized Helium Ion Beam Irradiation, ACS Nano 2019, 13, 14262–14273.10.1021/acsnano.9b07421CrossRefGoogle ScholarPubMed
Hlawacek, G. & Gölzhäuser, A. (Eds.), Helium Ion Microscopy, Springer International Publishing, 2016.10.1007/978-3-319-41990-9CrossRefGoogle ScholarPubMed
Hlawacek, G., et al., Helium ion microscopy, Journal of Vacuum Science and Technology B, 2014, 32, 020801.10.1116/1.4863676CrossRefGoogle Scholar
Klingner, N., et al. Time-of-flight secondary ion mass spectrometry in the helium ion microscope Ultramicroscopy, 2019, 198, 10–1710.1016/j.ultramic.2018.12.014CrossRefGoogle Scholar
Kretschmer, S., et al. , Supported two-dimensional materials under ion irradiation: the substrate governs defect production, Applied Materials & Interfaces, 2018, 10, 30827–30836.10.1021/acsami.8b08471CrossRefGoogle ScholarPubMed