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Influence of Triple Junction Structure on Cu Segregation in Al Thin Films

Published online by Cambridge University Press:  02 July 2020

C.J. Wauchope ,
R.R. Keller  and
J.E. Sanchez Jr.
C.J. Wauchope
Affiliation:
, Dept. Materials Science and Engineering, University of Michigan, Ann Arbor, MI48109
R.R. Keller
Affiliation:
Materials Reliability Division, N.I.S.T., Boulder, CO80303
J.E. Sanchez Jr.
Affiliation:
, Dept. Materials Science and Engineering, University of Michigan, Ann Arbor, MI48109
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Extract

Al thin films, used as interconnects in integrated circuit devices, are subject to voiding failures due to electromigration and stress. Electromigration is a diffusion process and voids are known to form at points of flux divergence such as triple junctions. Void formation in Al-Cu films has also been associated with 9θ-phase (Al2 Cu) precipitates [1], which form preferentially at grain boundaries and triple junctions. Some triple junctions are favored as nucleation sites [2], presumably due to energetic differences arising from the crystallographic nature of the junctions. Their character can be calculated from the crystallographic orientations of the surrounding grains and the associated grain boundary dislocation networks [3]. Bollmann's method of analysis results in two categories of triple lines: I-lines - the special case where the grain boundary dislocations balance; and U-lines - the general case where the dislocation arrays do not balance. U-lines should have higher energies than I-lines and should therefore behave differently [3, 4]. This paper investigates the relationship between triple-line character and the location of Al2 Cu precipitates at certain triple junctions in Al-lCu thin films.

Type
Thin Films/Coatings
Information
Microscopy and Microanalysis , Volume 5 , Issue S2: Proceedings: Microscopy & Microanalysis '99, Microscopy Society of America 57th Annual Meeting, Microbeam Analysis Society 33rd Annual Meeting, Portland, Oregon August 1-5, 1999 , August 1999 , pp. 846 - 847
Copyright
Copyright © Microscopy Society of America

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References

1. Beranbaum, L.and Patnaik, B., App. Phy. Lett., 18, (1971), 284.CrossRefGoogle Scholar

2. Frear, D.et al., Met. Trans. A, 21 A, (1990), 2449.CrossRefGoogle Scholar

3. Bollmann, W., Philos. Mag. A, 49, (1984), 73.CrossRefGoogle Scholar

4. Bollmann, W., Philos. Mag. A, 57, (1988), 637.CrossRefGoogle Scholar

5. Doni, E.et al., Scripta Metall., 24, (1990), 2325.Google Scholar

6. Palumbo, G.and Aust, K., Mat. Sci. Eng. A, 113, (1989), 139.CrossRefGoogle Scholar

7. Bollmann, W., Mat. Sci. Eng. A, 113, (1989), 129.CrossRefGoogle Scholar

8. Palumbo, G.and Aust, K., Scripta Metall., 24, (1990), 1771.CrossRefGoogle Scholar

9. The authors thank the NIST Office of Microelectronics Programs.Google Scholar