Hostname: page-component-586b7cd67f-t7fkt Total loading time: 0 Render date: 2024-11-29T21:47:15.386Z Has data issue: false hasContentIssue false
  • English
  • Français

Influence of Device Microstructure on The Optical Properties of Ge1-ySny (y=00.11) LEDs Produced by Next Generation Deposition Methods

Published online by Cambridge University Press:  23 September 2015

J. D. Gallagher ,
T. Aoki ,
P. Sims ,
J. Menendez  and
J. Kouvetakis
J. D. Gallagher
Affiliation:
Department of Physics & Astronomy, Arizona State University, Tempe, AZ 85287USA
T. Aoki
Affiliation:
LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ 85287USA
P. Sims
Affiliation:
Department of Chemistry & Biochemistry, Arizona State University, Tempe, AZ 85287USA
J. Menendez
Affiliation:
Department of Physics & Astronomy, Arizona State University, Tempe, AZ 85287USA
J. Kouvetakis
Affiliation:
Department of Chemistry & Biochemistry, Arizona State University, Tempe, AZ 85287USA

Abstract

An abstract is not available for this content so a preview has been provided. As you have access to this content, a full PDF is available via the ‘Save PDF’ action button.
Image of the first page of this content. For PDF version, please use the ‘Save PDF’ preceeding this image.'
Type
Abstract
Information
Microscopy and Microanalysis , Volume 21 , Supplement S3: Proceedings of Microscopy & Microanalysis 2015 , August 2015 , pp. 2137 - 2138
Copyright
Copyright © Microscopy Society of America 2015 

References

[1] Gallagher, J. D., et. al, Applied Physics Letters 105 (2014). p. 142102.Google Scholar
[2] Tseng, H. H., et. al, Applied Physics Letters 102 (2013). p. 182106.Google Scholar
[3] Wei, Du, et. al, Applied Physics Letters 104 (2014). p. 241110.Google Scholar
[4] This work was supported by the NSF. We acknowledge the use of facilities at the John M. Cowley Center for High Resolution Electron Microscopy at Arizona State University.Google Scholar