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Indium Sulfide and Ternary In-S-O Nanowires for Optoelectronic Applications

Published online by Cambridge University Press:  28 September 2012

J. Bartolomé ,
D. Maestre ,
A. Cremades  and
J. Piqueras
J. Bartolomé
Affiliation:
Department of Materials Physics, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, 28040, Spain
D. Maestre
Affiliation:
Department of Materials Physics, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, 28040, Spain
A. Cremades
Affiliation:
Department of Materials Physics, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, 28040, Spain
J. Piqueras
Affiliation:
Department of Materials Physics, Facultad de Ciencias Físicas, Universidad Complutense de Madrid, Madrid, 28040, Spain

Abstract

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Indium sulfide (In2S3) is a promising semiconductor material for window layers in solar cell devices and other optoelectronic applications as it presents a direct band gap around 2.0 eV at room temperature, and large photosensitivity and photoconductivity. The presence of several polymorphic structures depending on the processing parameters is also of interest to tailor the required material properties for different applications. It is currently being investigated for high efficiency solar cell based on CuInS2-In2S3 heterostructures, replacing CdS layers. Few studies have been reported on nanostructured In2S3 grown by several methods.

Type
Materials Sciences
Information
Microscopy and Microanalysis , Volume 18 , Supplement S5: Portuguese Supplement , August 2012 , pp. 121 - 122
Copyright
Copyright © Microscopy Society of America 2012