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In Situ Transmission Electron Microscopy Studies of the Magnetization Reversal Mechanism in Information Storage Materials

Published online by Cambridge University Press:  28 July 2005

Amanda K. Petford-Long ,
Xavier Portier ,
Pascale Bayle-Guillemaud ,
Thomas C. Anthony  and
James A. Brug
Amanda K. Petford-Long
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Xavier Portier
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Pascale Bayle-Guillemaud
Affiliation:
Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, UK
Thomas C. Anthony
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304
James A. Brug
Affiliation:
Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, CA 94304
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Abstract

The Foucault and Fresnel modes of Lorentz microscopy, together with a quantitative magnetization mapping technique, summed image differential phase-contrast imaging, were used to study the magnetization reversal mechanism of the sense layer in spin-valve structures exhibiting the giant magnetoresistance effect. In addition to studies of sheet film, lithographically defined spin-valve elements were investigated. A current can be passed through the element during magnetizing so that the effect of the applied current on the giant magnetoresistance and magnetization reversal mechanism can be studied. Results are presented for a number of different spin-valve structures.

Keywords

magnetic layered filmsin situ Lorentz microscopygiant magnetoresistancespin valves
Type
1998 ASU ELECTRON MICROSCOPY WORKSHOP
Information
Microscopy and Microanalysis , Volume 4 , Issue 3 , June 1998 , pp. 325 - 333
Copyright
© 2005 Microscopy Society of America

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