Hostname: page-component-586b7cd67f-tf8b9 Total loading time: 0 Render date: 2024-11-28T10:43:44.186Z Has data issue: false hasContentIssue false
  • English
  • Français

In Situ TEM Analysis of Facet Motion in Gold Σ=3 {112} Boundaries

Published online by Cambridge University Press:  02 July 2020

D.L. Medlin
D.L. Medlin*
Affiliation:
Thin Film and Interface Science Department, Organization 8721, Mail Stop 9161, Sandia National Laboratories, Livermore, CA, 94551
Get access

Abstract

Interfacial anisotropy complicates the prediction of microstructural evolution, particularly ir extreme cases for which the presence of facets and corners prevents the application of classical notions of grain-boundary curvature. Although there has been much effort at incorporating anisotropic grain-boundary properties, including faceted geometries, into computational approaches for microstructural evolution, at present our mechanistic understanding of the behavior of facets anc their junctions remains limited. In this presentation, we investigate the development of faceted boundaries between Σ=3 <111> oriented grains in epitaxially deposited gold thin films. This system is well suited tc experimental studies of facet evolution since the crystallography and structure of the boundaries is already well understood. It is well known that “double-positioning” of epitaxially aligned <111> grains on a surface of three-fold or six-fold symmetry results in a microstructure composed of grains in two twin-related (Σ=3) variants that are separated by facets running vertically through the film and forming 120 degree corners [1,2].

Type
Applications of Microscopy: Surfaces/Interfaces
Information
Microscopy and Microanalysis , Volume 7 , Issue S2: Proceedings: Microscopy & Microanalysis 2001, Microscopy Society of America 59th Annual Meeting, Microbeam Analysis Society 35th Annual Meeting, Long Beach, California August 5-9, 2001 , August 2001 , pp. 324 - 325
Copyright
Copyright © Microscopy Society of America 2001

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1.Pashley, D.W. and Stowell, M.J., Phil. Mag. 8 (1963) 1605–1632.CrossRefGoogle Scholar
2.Stowell, M.J. in “Epitaxial Growth: Part B”, Matthews, J.W. (ed.) (Academic Press, New York, 1975) pp. 437–492.CrossRefGoogle Scholar
3.Hetherington, C.J.D., Dahmen, U., Penisson, J.-M., in “Atomic Resolution Microscopy of Surfaces and Interfaces,” ed. Smith, D.J. (MRS Proceedings, Vol. 466, 1997) 215–226.CrossRefGoogle Scholar
4.Medlin, D.L. and Lucadamo, G., in “Influences of Interface and Dislocation Behavior on Microstructure Evolution,” eds. Aindow, M. et al. (MRS Proceedings, Vol 652, 2001) in press.Google Scholar
5.This research is supported by the U.S. Department of Energy, in part by the Office of Basic Energy Sciences, under contract number DE-AC04-94-AL85000Google Scholar